基于分子动力学的离子注入辅助磨削4H-SiC机理研究
吴毅博, 吴淑晶, 王大中, 陈佳鹏, 宋宜润, 姜峰
Mechanism Study of Ion Implantation-assisted Grinding of 4H-SiC Based on Molecular Dynamics
WU Yibo, WU Shujing, WANG Dazhong, CHEN Jiapeng, SONG Yirun, JIANG Feng
中国表面工程
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2026, (2): 173
-183
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DOI: 10.11933/CSE2026303
