| 摘要: |
| 高能脉冲磁控溅射技术(HiPIMS)是一种新型的磁控溅射技术，以峰值功率密度高，金属离化率高为特点，与传统直流磁控溅射(DCMS)相比，表现出其独有的优势。晶态薄膜的制备以往通常采用高温沉积或者后续的热处理技术，不仅工艺复杂，而且容易造成能源损失。高度离化的脉冲等离子体使 HiPIMS 技术成功应用于晶态薄膜的沉积，极大地降低制备温度，简化制备工艺，扩展了基底材料的选择范围，提升了薄膜的应用空间。然而，针对 HiPIMS 低温制备晶态薄膜的系统研究较为缺乏，因此亟需对现有的研究结果进行整理、归纳、总结，对其进一步研究提供理论参考。基于晶态薄膜的低温制备， 在详细介绍以 Al2O3、VO2、TiO2为代表的晶态薄膜的 HiPIMS 低温沉积工艺及其结构性能的基础上，探讨薄膜低温结晶的机理，展望 HiPIMS 未来的研究方向和应用前景。 |
| 关键词: HiPIMS 结晶薄膜 沉积温度 Al2O3 VO2 TiO2 |
| DOI：10.11933/j.issn.1007?9289.20211213002 |
| 分类号:TG174 |
| 基金项目:国家自然科学基金资助项目(51771052，51001026)。Fund：Supported by National Natural Science Foundation of China (51771052, 51001026). |
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| Research Progress of Crystalline Thin Films by High Power Impulse Magnetron Sputtering at a Low Temperature |
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BAI Xuebing1,2, CAI Qun1,2, ZHANG Xuhai1,2
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1.School of Materials Science and Engineering, Southeast University, Nanjing 211189 , China;2.Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189 , China
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| Abstract: |
| High power impulse magnetron sputtering (HiPIMS) is a new type of magnetron sputtering technology characterized by high peak power density and high metal ionization rate. Compared with conventional direct current magnetron sputtering (DCMS), HiPIMS shows its unique advantages. The crystalline films are usually prepared by high temperature or post heat treatment, which is complicated and easy to cause energy loss. HiPIMS is successfully applied to the deposition of crystalline thin films due to the highly ionized pulsed plasma, which can reduce the preparation temperature, simplify the preparation process, expand the range of substrate materials, and improve the application space of thin films. However, there is a lack of systematic research about the preparation of crystalline films at a low temperature by HiPIMS. Therefore, it is urgent to summarize the previous research results to provide theoretical references for further research on the deposition of HiPIMS films at a low temperature. Based on the preparation of crystalline thin films at a low temperature, the HiPIMS deposition process and its structural properties of crystalline thin films represented by Al2O3, VO2 and TiO2 are introduced in detail. The low-temperature crystallization mechanism of thin films is discussed. The future development and application of HiPIMS are prospected. |
| Key words: HiPIMS crystalline thin films deposition temperature Al2O3 VO2 TiO2 |
