| 摘要: |
| 磁控溅射技术发展至今已有 40 余年的历史，广泛应用在航空航天、武器装备、电子器件等领域，但较低的离化率对磁控溅射的工艺可控性、深孔沉积能力甚至涂层质量等有很大限制，高离化率一直是磁控溅射追寻的目标。从早期引入辅助增强装置，到高功率脉冲磁控溅射的提出，以及持续高功率技术的发展，高离化磁控溅射技术受到广泛关注。以高离化磁控溅射技术的发展为切入点，综述近年来该技术的发展迭代、应用现状以及面向各种应用的工业设备研发进程。高离化磁控溅射的发展可归纳为四个阶段，即辅助增强的磁控溅射、高功率脉冲磁控溅射、改进型高功率脉冲磁控溅射以及持续高功率磁控溅射。分别阐述不同阶段的技术特点和存在的问题，分析各技术的应用现状及其潜在的应用价值，介绍各技术的工业设备及其应用现状。随着工业发展对涂层长寿命、高可靠性的要求，以及市场对高效率制备的诉求，高离化磁控溅射也在朝着可控、精确、高效的方向发展，最后对高离化磁控溅射技术未来发展进行展望。 |
| 关键词: 高离化率 辅助增强离化 高功率脉冲 持续高功率溅射 |
| DOI：10.11933/j.issn.1007?9289.20211230005 |
| 分类号:TG174 |
| 基金项目:深圳市科技计划(SGDX20201103095406024，JSGG20191129112631389)和北京大学深圳研究生院引进人才科研启动经费(1270110273)资助项目 |
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| High Ionization Magnetron Sputtering Technology and Industry Applications |
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MA Minyu, LIU Liangliang, LI Tijun, LI Xiteng, CUI Suihan, WU Zhongzhen
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School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055 , China
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| Abstract: |
| After nearly 40 years’ development, magnetron sputtering (MS) technique is widely used in many fields such as aerospace, weaponry and electronic devices. However, the process controllability, the deep hole deposition and the coating quality are significantly limited because of the low ionization rate, so MS presents a strong requirement of the high ionization rate. From the early plasma enhancement devices, to high power impulse magnetron sputtering (HiPIMS) and the continuous high-power magnetron sputtering (C-HPMS), high-ionized MS technique are extensively concerned. The development, applications, and industrial equipment of the high ionized MS are reviewed. The development of high ionization MS can be summarized into four stages, namely plasma enhanced MS, HiPIMS, modified HiPIMS and C-HPMS. The technical characteristics and problems at different stages, and the application status, application prospects, as well as the industrial equipment of each technique are presented. With the increasing requirements for the long life and high reliability to the industrial coatings, as well as the market requirement to high efficiency preparation, high ionized MS is developing towards the high controllable, accuracy and efficiency. Finally, the future development of the high ionized MS is prospected. |
| Key words: ionization plasma enhanced ionization high-power pulse continuous high power sputtering |
