| 摘要: |
| 高功率脉冲磁控溅射(HiPIMS)技术具有离化率高、等离子体密度高、沉积温度低、薄膜结构致密等优点，与沉积超硬耐磨涂层相比，HiPIMS 技术在光电薄膜沉积中的应用相对较少，且 HiPIMS 镀膜过程中涉及工艺参数较多，工艺参数的选择直接影响着沉积薄膜的结构和性能。基于这两个问题，系统梳理 HiPIMS 在光电薄膜沉积中放电的时空演变特性，重点介绍 HiPIMS 技术在光电薄膜沉积过程中的关键工艺参数，包括峰值功率密度、衬底材料、掺杂、偏置电压等，对薄膜结构和性能的影响规律，最后展望 HiPIMS 技术在光电薄膜沉积中的应用前景与发展趋势。 |
| 关键词: 高功率脉冲磁控溅射(HiPIMS) 光电薄膜 等离子体 放电特性 参数调控 |
| DOI：10.11933/j.issn.1007?9289.20211231004 |
| 分类号:TN305;O484 |
| 基金项目:北京市自然科学基金(1192008)和北京市教委科技项目(KM202010015003，22150122029)资助项目 |
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| Research Progress on Optoelectronic Thin Films Deposited by HiPIMS: Discharge Characteristics and Parameter Adjustment |
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ZHANG Haibao, LIU Yang, CHEN Qiang
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Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600 , China
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| Abstract: |
| High power impulse magnetron sputtering (HiPIMS) technology has the advantages of high ionization rate, high plasma density, low deposition temperature, and dense film structure. Compared with the deposition of super-hard wear-resistant coatings, HiPIMS technology has relatively few applications in the deposition of optoelectronic thin films. At the same time, many parameters are involved in the HiPIMS coating process, and the structure and performance of deposited film are directly affected by the choice of process parameters. Based on these two issues, the tempo-spatial evolution characteristics of the HiPIMS discharge in the deposition process of optoelectronic thin film are summarized. The key process parameters for the structure and function, including peak power density, substrate material, doping, bias, etc., are introduced in optoelectronic thin film deposited by HiPIMS. Finally, the future application and development trends of HiPIMS technology in the deposition of optoelectronic thin films are prospected. |
| Key words: high power impulse magnetron sputtering (HiPIMS) optoelectronic thin film plasma discharge characteristics parameter adjustment |
