Mechanism Study of Ion Implantation-assisted Grinding of 4H-SiC Based on Molecular Dynamics

WU Yibo, WU Shujing, WANG Dazhong, CHEN Jiapeng, SONG Yirun, JIANG Feng

China Surface Engineering ›› 2026, Vol. 39 ›› Issue (2) : 173-183.

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China Surface Engineering ›› 2026, Vol. 39 ›› Issue (2) : 173-183. DOI: 10.11933/CSE2026303

Mechanism Study of Ion Implantation-assisted Grinding of 4H-SiC Based on Molecular Dynamics

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2026, 39(2): 173-183 https://doi.org/10.11933/CSE2026303

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