磨粒和抛光垫特性对蓝宝石超声化学机械抛光的影响

doi:10.11933/j.issn.1007-9289.20180824002

PDF(2372 KB)

中国表面工程 ›› 2018, Vol. 31 ›› Issue (6) : 125-132. DOI: 10.11933/j.issn.1007-9289.20180824002

表面工程

磨粒和抛光垫特性对蓝宝石超声化学机械抛光的影响

钟敏,袁任江,李小兵,陈建锋,许文虎

作者信息 +

Effects of Abrasive Particles and Pads’ Characteristics on Ultrasonic Assisted Chemical Mechanical Polishing for Sapphire

ZHONG Min, YUAN Renjiang, LI Xiaobing, CHEN Jianfeng and XU Wenhu

Author information +

文章历史 +

摘要

抛光磨粒和抛光垫对蓝宝石超声化学机械抛光起重要作用，为研究磨粒和抛光垫特性对蓝宝石材料抛光效率和质量的影响，利用自制超声弯曲振动辅助化学机械抛光装置，研究金刚石、氧化铝和二氧化硅3种不同磨粒，以及表面多孔且无沟槽的聚氨酯抛光垫、IC1000抛光垫、IC1000和SubaⅣ复合抛光垫对蓝宝石材料去除率及抛光后表面粗糙度的影响。由质量损失求得的去除率和原子力显微镜表面形貌测试结果表明：二氧化硅抛光液的去除率3.2 μm/h接近氧化铝抛光液去除率3.8 μm/h，远大于金刚石抛光液去除率0.3 μm/h，且其抛光后的蓝宝石表面光滑、无损伤；3种抛光垫抛光后的蓝宝石粗糙度接近，约0.10 nm，但聚氨酯抛光垫的去除率为3.2 μm/h，远大于IC1000抛光垫的去除率1.9 μm/h及复合垫的去除率1.6 μm/h。二氧化硅抛光液和聚氨酯抛光垫适宜蓝宝石超声化学机械抛光工艺，可获得高去除率和原子级光滑表面。

Abstract

Different abrasive particles and polishing pads have important impact on ultrasonic flexural vibration assisted chemical mechanical polishing (UFV-CMP) for the sapphire. Such effect was investigated using a self-made UFV-CMP equipment. The particles were diamond, alumina and silica. The pads were polyurethane pad with porous surface and no grooves, IC1000 pad, and IC1000/SubaⅣcompound pad. The MRRs based on weight reduction show that the sapphire MRR of the silica slurry is 3.2 μm/h. It is close to 3.8 μm/h for the alumina slurry and much bigger than that of of the diamond slurry, 0.3 μm/h. Moreover, the sapphire surface polished by the silica slurry is smooth without damage observing from AFM. The roughness of the polished sapphire caused by different polishing pads is similar to be about 0.1 nm. However, the sapphire MRR of the polyurethane pad is 3.2 μm/h, much bigger than 1.9 μm/h of the IC1000 pad and 1.6 μm/h of the IC1000/SubaⅣ compound pad. Therefore, the silica slurry and polyurethane pad are suitable for sapphire UFV-CMP to simultaneously obtain high MRR and atomically smooth surface.

导出引用

钟敏,袁任江,李小兵,陈建锋,许文虎. 磨粒和抛光垫特性对蓝宝石超声化学机械抛光的影响[J]. 中国表面工程, 2018, 31(6): 125-132 https://doi.org/10.11933/j.issn.1007-9289.20180824002

ZHONG Min, YUAN Renjiang, LI Xiaobing, CHEN Jianfeng and XU Wenhu. Effects of Abrasive Particles and Pads’ Characteristics on Ultrasonic Assisted Chemical Mechanical Polishing for Sapphire[J]. China Surface Engineering, 2018, 31(6): 125-132 https://doi.org/10.11933/j.issn.1007-9289.20180824002

参考文献

[1] KHATTAK C P, SHETTY R, SCHWERDTFEGER C R, et al. World's largest sapphire for many applications[J]. Journal of Crystal Growth, 2016, 452:44-48.
[2] MERRICKS D. Alumina abrasives for sapphire substrate polishing[J]. ECS Transactions, 2011, 34(1):1035-1039.
[3] AIDA H, DOIT, TAKEDA H, et al. Ultraprecision CMP for sapphire, GaN and SiC for advanced optoelectronics materials[J]. Current Applied Physics, 2012, 12:41-46.
[4] VOVK E A, BUDNIKOV A T, DOBROTVORSKAYA M V, et al. Mechanism of the interaction between Al₂O₃ and SiO₂ during the chemical mechanical polishing of sapphire with silicon dioxide[J]. Journal of Surface Investigation X.-Ray, 2012, 6:115-121.
[5] ATHUEK N B, YOSHIMOTO Y, SAKAI K, et al. Study on effect of the surface variation of colloidal silica abrasive during chemical mechanical polishing of sapphire[J]. Japanese Journal of Applied Physics, 2017, 56:07KB01.
[6] WANG Y Z, LIU S H, PENG G L, et al. Effects of surface treatment on sapphire substrates[J]. Journal of Crystal Growth, 2005, 274:241-245.
[7] WANG J C, NIU X H, ZHAO X, et al. Effect of a pH regulator on sapphire substrate CMP[J]. ECS Journal of Solid State Science and Technology, 2017, 6(12):832-838.
[8] 贾少华, 刘玉岭, 王辰伟, 等. 化学机械平坦化材料对蓝宝石抛光速率与粗糙度的影响[J]. 功能材料, 2016, 47(2):2242-2246 JIA S H, LIU Y L, WANG C W, et al. Effect of chemical mechanical planarization material on sapphire polishing rate and roughness[J]. Journal of Functional Materials, 2016, 47(2):2242-2246(in Chinese)
[9] HU X K, SONG Z T, PAN Z C, et al. Planarization machining of sapphire wafers with boron carbide and colloidal silica as abrasives[J]. Applied Surface Science, 2009, 255:8230-8234.
[10] YAN W X, ZHANG Z F, GUO X H, et al. The effect of pH on sapphire chemical mechanical polishing[J]. ECS Journal of Solid State Science and Technology, 2015, 4:108-111.
[11] ZHANG Z F, ZHANG W J, ZhANG S D, et al. Study on chemical mechanical polishing performances of sapphire wafer (0001) using silica-based slurry[J]. ECS Journal of Solid State Science and Technology, 2017, 6(10):723-727.
[12] ZHOU Y, PAN G S, GONG H, et al. Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms[J]. Colloids and Surfaces A:Physicochemical and Engineering Aspects, 2017, 513:153-159.
[13] XU L, ZOU C L, SHI X L, et al. Fe-Nx/C assisted chemical-mechanical polishing for improving the removal rate of sapphire[J]. Applied Surface Science, 2015, 343:115-120.
[14] XU L, ZHANG X, KANG C X, et al. Preparation of a novel catalyst (SoFeⅢ) and its catalytic performance towards the removal rate of sapphire substrate during CMP process[J]. Tribology International, 2018, 120:99-104.
[15] LEI H, HUANG L Q, GU Q. Synthesis of Zn-doped colloidal SiO₂ abrasives and their applications in sapphire chemical mechanical polishing slurry[J]. Journal of Materials Science:Materials in Electronics, 2017, 28:1229-1237.
[16] ZHANG B C, LEI H, CHEN Y. Preparation of Ag₂O modified silica abrasives and their chemical mechanical polishing performances on sapphire[J]. Friction, 2017, 5(4):429-436.
[17] LIU T T, LEI H. Nd³⁺-doped colloidal SiO₂ composite abrasives:Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers[J]. Applied Surface Science, 2017, 413:16-26.
[18] WANG X, LEI H, CHEN R L. CMP behavior of alumina/metatitanic acid core-shell abrasives onsapphire substrates[J]. Precision Engineering, 2017, 50:263-268.
[19] LU J, XU Y C, ZHANG D Y, et al. The synthesis of the core/shell structured diamond/akageneite hybrid particles with enhanced po??????g performance[J]. Materials, 2017, 10(6):673.
[20] XU Y C, LU J, XU X P. Study on planarization machining of sapphire wafer with soft-hard mixed abrasive through mechanical chemical polishing[J]. Applied Surface Science, 2016, 389:713-720.
[21] 陈涛, 刘德福, 佘亦曦, 等. 光纤阵列的超声椭圆振动辅助化学机械抛光[J]. 中国表面工程, 2016, 29(3):132-138 CHEN T, LIU D F, SHE Y X, et al. Ultrasonic elliptical vibration assisted chemical mechanical polishing for fiber array[J]. China Surface Engineering, 2016, 29(3):132-138(in Chinese)
[22] 曾一凡, 杨卫平, 吴勇波, 等. 超声振动辅助固结磨粒抛光硅片表面形成机理及实验[J]. 中国机械工程, 2016, 23:3208-3214 ZENG Y F, YANG W P, WU Y B, et al. Mechanism of surface formation of silicon wafer processed by fixed abrasive polishing with assistance of ultrasonic vibration and experiments[J]. China Mechanical Engineering, 2016, 23:3208-3214(in Chinese)
[23] ZHAO Q L, SUN Z Y, GUO B. Material removal mechanism in ultrasonic vibration assisted polishing of micro cylindrical surface on SiC[J]. International Journal of Machine Tools and Manufacture, 2016, 103:28-39.
[24] XU W H, LU X C, PAN G S, et al. Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate[J]. Applied Surface Science, 2010, 256:3936-3940.
[25] XU W H, LU X C, PAN G S, et al. Effects of the ultrasonic flexural vibration on the interaction between the abrasive particles, pad and sapphire substrate during chemical mechanical polishing (CMP)[J]. Applied Surface Science, 2011, 257:2905-2911.
[26] YIN D, NIU X H, ZHANG K, et al. Preparation of MgO doped colloidal SiO₂ abrasive and their chemical mechanical polishing performance on c-, r-and a-plane sapphire substrate[J]. Ceramics International, 2018, 44(12):14631-14637.
[27] SHI X L, PAN G S, ZHOU Y, et al. A study of chemical products formed on sapphire (0001) during chemical-mechanical polishing[J]. Surface & Coatings Technology, 2015, 270:206-220.
[28] GUTSCHE H W, MOODY J W. Polishing of sapphire with colloidal silica[J]. Journal of The Electrochemical Society, 1978, 125(1):136-138.

基金

国家自然科学基金（51865030）；江西省重大研发专项（20173ABC28008）

PDF(2372 KB)

Accesses

Citation

Detail

段落导航

摘要
Abstract
关键词
Key words
引用本文
参考文献
基金

选择文件类型/文献管理软件名称

选择包含的内容

摘要

Abstract

关键词

Key words

引用本文

{{custom_sec.title}}

{{custom_sec.title}}

参考文献

{{custom_fnGroup.title_cn}}

脚注

基金



发布日期
2023-12-19

模态框（Modal）标题

选择文件类型/文献管理软件名称

选择包含的内容

摘要

Abstract

关键词

Key words

引用本文

{{custom_sec.title}}

{{custom_sec.title}}

参考文献

{{custom_fnGroup.title_cn}}

脚注

基金