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| 摘要: |
| 在JGP560V磁控溅射镀膜设备上镀制多晶Cu膜，选取沉积态和经过3h去应力退火的退火态两种Cu膜，利用纳米压入技术测量了其室温下的蠕变性能。试验结果显示去应力退火后的Cu膜残余应力反而升高；且其室温蠕变性能与沉积态的Cu膜有很大的不同；随保载载荷升高，两种状态下的Cu膜蠕变应力指数均升高。分析认为这是由于退火造成膜基体系内应力的变化，同时减少了薄膜中的各种点缺陷和线缺陷，从而改变了Cu膜蠕变性能的结果。 |
| 关键词: 残余应力 纳米压入 蠕变 退火 |
| DOI： |
| 分类号:TG146.4 |
| 基金项目:国家自然科学基金资助项目(59931010) |
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| The Effects of Annealing on Creep Behavior of Copper Film During Nanoindentation |
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WANG Fei XU Ke-wei
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| Abstract: |
| The investigation of annealing effects on creep properties of polycrystalline Cu thin films were conducted on a nanoindentation instrument. The results showed that the residual stress increases after annealing and the properties of nanoindentation creep are very different with deposited Cu thin film; the stress exponents increases with increase of load and the increasing of creep rate for annealing Cu thin films is larger than that of deposited one. The main reason is that the residual stress and microstructure in Cu thin films are changed during annealing. |
| Key words: residual stress,nanoindentation,creep,annealing |
