| 摘要: |
| 为了防止氢扩散导致金属材料的失效，通常在其表面制备一层 CrN 阻氢薄膜。但是 CrN 涂层的热稳定性较差，抗氧化温度低于 600 ℃。采用高功率脉冲磁控溅射技术，利用 Cr 和 Al 双靶共沉积 CrAlN 薄膜来提高其高温抗氧化性能。试验变量为基体负偏压的大小，分别为-100 V、-200 V、-300 V 和-400 V。结果表明，四组 CrAlN 薄膜均为柱状晶结构，随着基体偏压提高，膜层的致密度提高，但同时薄膜沉积速率下降；CrAlN 薄膜的择优生长方向为 Cr(200)晶面法线方向。四组 CrAlN 薄膜的氢抑制率均超过 70%，氢原子扩散系数最低比 316L 不锈钢基体低 3 个数量级。当基体偏压为-300 V 时，可以同时获得最优的氢抑制率(87.4%)和最低的氢原子扩散系数(6.188×10?10 cm2 / s)。600 ℃、氧气气氛下保温 60 min，CrAlN 膜基结合面处氧含量仅为表面处的 30%左右。相比于 CrN 薄膜，在相同基体偏压下，CrAlN 薄膜的氢原子扩散系数更小；高偏压下制备的 CrAlN 薄膜氧增重量仅为 316L 不锈钢基体的 10%，抗氧化性能更好。 |
| 关键词: CrAlN 高功率脉冲磁控溅射 基体偏压 阻氢 高温抗氧化 |
| DOI：10.11933/j.issn.1007?9289.20210623001 |
| 分类号:TG174 |
| 基金项目:黑龙江省自然科学基金联合引导项目(LH2019A014)和国家自然科学基金(11875119 和 12075071)资助项目 |
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| Effect of Substrate Bias on the Properties of Craln Films Prepared by High Power Pulsed Magnetron Sputtering |
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ZHANG Hui1, GONG Chunzhi1, WANG Xiaobo2, ZHANG Weixin1, TIAN Xiubo1
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1.State Key Laboratory of advanced welding and joining, Harbin Institute of Technology,Harbin 150001 , China;2.Institute of Materials, China Academy of Engineering Physics, Mianyang 621900 , China
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| Abstract: |
| In order to prevent the failure of metal materials caused by hydrogen diffusion, a layer of CrN hydrogen barrier film is usually prepared on its surface. However, the thermal stability of CrN thin film is poor, and the oxidation resistance temperature is lower than 600 ℃. CrAlN thin films are co deposited by high power pulsed magnetron sputtering with Cr and Al targets to improve high temperature oxidation resistance. The experimental variable is the negative bias voltage of the matrix, which is -100 V, -200 V, -300 V and -400 V respectively. The results show that the four groups of CrAlN films are columnar crystal structure. With the increase of substrate bias voltage, the density of the films increases, but the deposition rate decreases; The preferred growth direction of CrAlN film is the normal direction of Cr(200) crystal plane. The hydrogen inhibition rate of the four groups of CrAlN films is more than 70%, and the diffusion factor of hydrogen atom is three orders of magnitude lower than that of 316L stainless steel. When the substrate bias is -300 V, the optimal hydrogen inhibition rate (87.4%) and the lowest hydrogen diffusion factor (6.188×10?10 cm2 / s) can be obtained simultaneously. The oxygen content at the interface of CrAlN film substrate is only about 30% of that at the surface when it is kept at 600 ℃ for 60 min in oxygen atmosphere. Compared with CrN films, the hydrogen diffusion factor of CrAlN films is smaller under the same substrate bias; The weight gain of oxygen of CrAlN films prepared at high bias voltage is only 10% of that of 316L stainless steel substrate, and its oxidation resistance is better. |
| Key words: CrAlN high power pulsed magnetron sputtering substrate bias hydrogen resistance high temperature oxidation resistance |
