| Author Name | Affiliation | | ZHU Xiangrui1 | College of Mechanical Engineering and Automation, Beihang University, Beijing 100191 , China | | HAN Mingyue1 | College of Mechanical Engineering and Automation, Beihang University, Beijing 100191 , China | | FENG Pengbo | Beihang Goer (Weifang) Intelligent Robot Co., Ltd, Weifang 261000 , China | | SUN Yuqiang | Beihang Goer (Weifang) Intelligent Robot Co., Ltd, Weifang 261000 , China | | LI Liuhe | College of Mechanical Engineering and Automation, Beihang University, Beijing 100191 , China ；Beihang Goer (Weifang) Intelligent Robot Co., Ltd, Weifang 261000 , China |
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| 摘要: |
| 双极高功率脉冲磁控溅射技术(BP-HiPIMS)在保持靶材粒子高离化率的同时，通过调节“泵出”脉冲电压，控制离子能量和流量，从而改善薄膜的性能，正在得到工业界的广泛关注。在无法施加基体偏压的绝缘基体或薄膜的制备上， BP-HiPIMS 拥有更加显著的优势，同时基体接地可以克服悬浮基体快速充电的问题，从而有助于沉积离子向下游扩散增能。 BP-HiPIMS 选择相对较短的正负脉冲间隔时间、负脉冲持续时间以及较高的正脉冲电压幅值，有利于优化薄膜的性能。近年来国内外学者应用 BP-HiPIMS 技术制备薄膜取得了显著的成果。相对于常规 HiPIMS，BP-HiPIMS 所制备的铜膜(Cu)、类金刚石碳基薄膜(DLC)、氮化钛薄膜(TiN)、氮化铬薄膜(CrN)等都表现出更加优异的力学性能，而不同工艺下薄膜沉积速率的变化在不同试验中存在分歧，其影响机制有待进一步探索。 |
| 关键词: HiPIMS BP-HiPIMS 双极脉冲 离子能量 薄膜制备 |
| DOI：10.11933/j.issn.1007?9289.20220114002 |
| 分类号:TG156;TB114 |
| 基金项目:国家重大专项资助项目(2017-VII-0012-0108, 2017-VII-0003-0096) |
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| Review of Film Preparation by Bipolar Pulsed High Power Impulse Magnetron Sputtering |
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ZHU Xiangrui1,HAN Mingyue1,FENG Pengbo,SUN Yuqiang,LI Liuhe
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| Abstract: |
| As an extensive attention in the industry, the bipolar pulsed high power impulse magnetron sputtering (BP-HiPIMS) is carried out at a high ionization rate of target particles and high density plasma vapor, and employs a "pump out" positive pulse voltage to control the energy and flux of ions, in this way to improve the properties of deposited films. BP-HiPIMS has a more significant advantage in the preparation of insulating substrates or films which cannot be biased, while the problem of rapid charging of floated substrate can be overcome by the substrate grounded, thus contributing to the diffusion and energy enhancement of deposited ions to the downstream. The application of BP-HiPIMS with relatively short interval of positive and negative pulse, negative pulse duration and high positive pulse voltage amplitude is conductive to optimizing the properties of the films. In recent years, the focus is paid on the various films with relatively excellent properties prepared via the advanced BP-HiPIMS approach. In summary, compared with the films treated by the conventional HiPIMS discharge, the mechanical properties of the Cu, DLC, TiN, CrN films prepared by the BP-HiPIMS are effectively improved. However, the increase in film deposition rate is divergent in different experiments which needs to be further explored. |
| Key words: HiPIMS BP-HiPIMS bipolar pulse ion energy film preparation |
