| 摘要: |
| 采用高功率调制脉冲磁控溅射(MPPMS)技术在 Si(100)基体上沉积 Cu 薄膜,SEM 观察薄膜厚度及生长特征、XRD 分析薄膜晶体结构、nanoindentor 测量薄膜纳米硬度和弹性模量、Stoney 公式计算薄膜残余应力,研究沉积过程靶基距对 Cu / Si(100)薄膜沉积速率、微结构及残余应力的影响。 随着靶基距的增大,薄膜沉积速率降低,薄膜的生长结构由致密 T 区向 I 区转变,Cu(111)择优生长的晶粒逐渐减小,薄膜纳米硬度和弹性模量也相应降低,残余拉应力约为 400 MPa。 较小靶基距时增加的沉积离子通量和能量,决定了薄膜晶粒合并长大体积收缩过程的主要生长形式,导致了 Cu / Si(100)薄膜具有的残余拉应力状态。 MPPMS 工艺的高沉积通量和粒子能量可实现对 Cu / Si(100)薄膜残余应力的调控。 |
| 关键词: 高功率调制脉冲磁控溅射 (MPPMS) Cu / Si (100) 薄膜 靶基距 残余应力 Stoney 公式 |
| DOI：10.11933/j.issn.1007-9289.20190910002 |
| 分类号:TG174.444 |
| 文章编号:1007-9289(2020)06-0086-07 |
| 文献标识码:A |
| 基金项目:国家自然科学基金(51575077, 51601029, U1508218) |
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| Effects of Target-substrate Distance on Structure and Residual Stress of Cu / Si(100) Thin Films |
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Meng Di, Jiang Zhitao, Li Yuge, Gao Jianying, Lei Mingkai
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Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 , China
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| Abstract: |
| Cu thin films were deposited on the Si(100) substrate by modulated pulsed power magnetron sputtering (MPPMS). The effect of target-substrate distance on film thickness, microstructure, nanohardness and residual stress was systematically in- vestigated by using SEM, analyzing crystal structure by XRD, nanoindentor and Stoney equation methods. With increasing the target-substrate distance, the deposition rates of Cu / Si(100) thin films decrease due to reduction of both the deposition flux and particle energy. The microstructure of the Cu / Si(100) thin films also change from the dense zone T structure to the zone I struc- ture with decrease of the Cu(111) grain size I, the hardness and elastic modulus of the thin films correspondently decrease with residual tensile stress of about 400 MPa. The reduced deposition ion flux and energy with the increase of target-substrate distance determine the main growth mode of the thin film grains as coalesce and shrinkage process, resulting in the Cu / Si(100) films with a residual tensile stress state. The high deposition flux and ion energy of MPPMS could effectively control the residual stress of Cu / Si(100) films. |
| Key words: modulated pulsed power magnetron sputtering(MPPMS) Cu / Si(100) thin films target-substrate distance re- sidual stress stoney equation |
