| 摘要: |
| 为了研究抛光工艺参数（抛光压力、抛光台转速、抛光液流量）对精细雾化抛光TFTLCD玻璃基板的影响，实现对玻璃基板的高效、高质量加工，采用正交试验方法对玻璃基板进行雾化抛光，以材料去除率(MRR)和表面粗糙度(Ra)为评价指标，根据实验结果得到最优的工艺参数组合，并将传统抛光和雾化抛光进行了对比。结果表明：当压力为0.055 MPa，抛光台转速为65 r/min，抛光液流量为8.3 mL/min时，雾化抛光的材料去除率为219 nm/min，表面粗糙度Ra为1.1 nm，光学透过率≥92.6%。在相同的试验条件下，传统抛光的去除率和表面粗糙度分别为335 nm/min和1.2 nm，两种方法的抛光效果相近，但雾化方法抛光液用量仅为传统的1/10。 |
| 关键词: 化学机械抛光 玻璃基板 精细雾化 正交试验 |
| DOI：10.11933/j.issn.1007-9289.2015.02.014 |
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| 基金项目: |
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| Optimizing Process Parameters of Ultrasound Fine Atomization CMP on TFT-LCD Glass Substrate |
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MO Yidong, LI Qingzhong
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College of Mechanical Engineering, Jiangnan University, Wuxi 214122, Jiangsu
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| Abstract: |
| To investigate the influence of the polishing pressure, the rotating speed of the polishing pad and the flow rate of polishing fluid on ultrasound fine atomization chemicla mechanical polishing (CMP) of TFTLCD glass substrate, and to realize polishing with high efficiency and quality, an orthogonal design was employed. The material removal rate (MRR) and the surface roughness (Ra) were taken as assessment factors, and the best parameter combination was obtained according to the test result. Then the polishing effects of the traditional polishing and the ultrasonic atomization polishing were compared. The results show that in ultrasonic atomization polishing, the MRR is 219 nm/min and Ra of the glass substrate is 1.14 nm. When polishing pressure is 0.055 MPa, the rotating speed of the polishing pad is 65 r/min and the flow rate of polishing fluid is 8.3 mL/min. Under the same test conditions, the MRR and Ra of the traditional polishing are 335 nm/min and 1.20 nm respectively. Although the polishing effects of these two methods are close to each other, the quantity of the slurry in ultrasonic atomization polishing is only 1/10 of that in traditional polishing. |
| Key words: chemical mechanical polishing (CMP) glass substrate fine atomization orthogonal experiment |
