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| 直流磁控溅射法在PET基板上制备AZO薄膜 |
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王翠凤,邱锡荣,赵乙璇,欧耿良1,2,3
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1. 福建信息职业技术学院 机电工程系, 福州 350003;2. 高雄应用科技大学 模具工程系, 中国台湾 高雄 80706;3.台北医学大学 口腔医学院, 中国台湾 台北 11041
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| 摘要: |
| 室温下用直流磁控溅射法在PET塑料基板上制备氧化锌薄膜及掺铝氧化锌AZO(ZnO:Al)薄膜。通过X射线衍射仪（XRD）、扫描电子显微镜（SEM）、透射电子显微镜（TEM）、四点探针仪、霍尔效应仪及光谱仪等装置，考察了氧分率、溅射功率及铝掺杂量等工艺参数对薄膜微观结构和光电性能的影响。结果表明：AZO薄膜晶体结构为纯ZnO的六角纤锌矿结构。随着Al掺杂量增多，AZO薄膜导电性增加，透光率下降。在氧分率为8.2%，ZnO(40 nm)/Al(6 nm)三层膜条件下，得到电阻率为5.66×102 Ω·cm，可见光范围内透光率约为80%的AZO薄膜。 |
| 关键词: AZO PET基板 透明导电膜 直流磁控溅射 |
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| 基金项目:福建省教育厅自然科学基金(JA11306) |
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| Preparation of AZO Thin Films on PET Substrate Using DC Magnetron Sputtering |
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WANG Cui-feng, CHIOU Shi-yung， JHAO Yi-syuan， OU Keng-liang1,2,3
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1. Department of Mechanical and Electrical Engineering, Fujian Polytechnic of Information Technology, Fuzhou 350003;2. Department of Mold and Die Engineering, National Kaohsiung University of Applied Science, Kaohsiung 80706, Taiwan, China;3. College of oral medicine, Taipei Medical University, Taipei 11041, Taiwan, China
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| Abstract: |
| ZnO and AZO (ZnO:Al) thin films were deposited on PET substrates using the magnetron reactive sputtering process. Process parameters such as the oxygen to argon ratio, input power, and Al content in the films were controlled. The scanning electron microscope (SEM), transmission electron microscope (TEM), Xray diffraction (XRD), Hall effect instrument, fourpoint probe and spectrometer were used to detect the thickness, morphology, crystal structures, electric resistivity and optical transmittance for ZnO and AZO films, respectively. Results show that AZO thin films consist of single phase ZnO with hexagonal wurtzite structure through XRD and TEM analysis. The electric resistivity increases and optical transmittance decreases with increasing Al contents in the films. The electric resistivity of 5.66×102 Ω·cm and 80% optical transmittance are obtained with 8.2% of oxygen flow percentage and threelayer films of ZnO film (40 nm) and Al film (6 nm) combination. |
| Key words: AZO PET substrate transparent conductive films DC magnetron sputtering |