| 摘要: |
| 以CF4, CH4和H2作为前驱气体，改变基底温度，通过直流脉冲等离子气相沉积法(PECVD)制备掺氟类金刚石碳膜，用傅里叶红外光谱仪分析薄膜的键合结构，用拉曼光谱仪分析薄膜中杂化碳的sp2和sp3的存在状态，用纳米压痕仪和UMT2MT摩擦磨损实验机分别测量了薄膜的硬度、摩擦因数等机械性能。结果表明，F主要以C-F3，C-Fx(x=1,2,3)基团的形式存在于薄膜中；基底温度从不加热到500 ℃的范围，薄膜能够保持较低于0.020的摩擦因数；且基底温度为400 ℃时薄膜具有0.016的最低摩擦因数，但当基底温度超过600 ℃时，会破坏薄膜的内部结构而使机械性能下降。 |
| 关键词: 摩擦因数 氟掺杂 等离子增强气相沉积 (PECVD) |
| DOI： |
| 分类号: |
| 基金项目:国家自然科学基金(50823008, 50975273)；国家科技部项目(2010DFB34050) |
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| Influence of Substrate Temperature on the Tribological Properties of Fluorinated Diamond-like Carbon Films |
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CUI Jin-feng, YANG Tao, ZHANG Bin, QIANG Li, ZHENG Yu, ZHANG Jun-yan1,2
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1. School of Petrochemical Engineering, Lanzhou University of Technology, Lanzhou 730050;2. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000
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| Abstract: |
| Direct current plasma enhanced chemical vapor deposition (PECVD) was employed to fabricate fluorine doped carbon films with CF4, CH4 and H2 as precursor gases under different substrate temperatures. The bonding structures of the films were revealed by Fourier infrared spectrometer, the sp2 and sp3 hybrid carbon status was probed by Raman spectrometer, and the film hardness and friction were investigated by the nanoindentation instrument and UMT2MT reciprocating tribometer, respectively. The results show that F is mainly presented in the forms of C-F3 and C-Fx(x=1,2,3) groups in the films. The film fabricated in the substrate temperature ranging from no heat to 500 ℃ showed relatively low friction coefficient about less than 0.020. The lowest friction coefficient of the film was observed about 0.016 at 400 ℃, and the film structure would be destroyed and the mechanical properties worsened significantly while the substrate temperature exceeded 600 ℃. |
| Key words: friction coefficient fluorine doped plasma enhanced chemical vapor deposition (PECVD) |
