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CVD钨沉积层组织控制
马捷, 张永志, 魏建忠, 蒙丽娟
北京工业大学 材料科学与工程学院 功能材料教育部重点实验室, 北京100124
摘要:
以WF6和H2为反应气体,采用间断供应反应气体方法改变CVD钨沉积层显微组织形貌。研究了间断沉积工艺参数对沉积层显微组织及性能的影响,讨论了间断沉积层的表面应力状态及断口裂纹扩展情况。结果表明:采用间断化学气相沉积法钨层的显微组织随周期沉积时间的缩短,柱状晶晶粒长度尺寸变小,形态逐渐接近等轴晶;沉积层表面形貌呈圆球状,沉积层生长界面不再趋向于单一方向;钨层保持了连续CVD钨的高纯度、高密度特性。且采用间断供应反应气体沉积方法显著降低了钨制品表面的残余应力,使裂纹扩展方向发生改变,有效阻碍了裂纹的深入扩展。
关键词:  化学气相沉积    残余应力  裂纹
DOI:
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基金项目:
Control the Microstructure of Tungsten Layer Fabricated by Chemical Vapor Deposition
MA Jie, ZHANG Yong–zhi, WEI Jian–zhong, MENG Li–juan
The Key Laboratory of Ministry of Education of Advanced Functional Materials, Department of Materials Science and Engineenig, Beijing University of Technology, Beijing 100124
Abstract:
The microstructure of tungsten layer fabricated by chemical vapor deposition was changed by supplying the reactive gas WF6 and H2 discontinuously. The effect of the technics principle of chemical vapor deposition on the tungsten layer's microstructure and properties had been analyzed. And the condition of stress on the surface and crack on the fracture surface had been discussed. The results show that the microstructure of Tungsten layer is changed from layered columnar grains to equiaxed grains with the decreasing of cyclical deposition time. And the surface appearances are spherical grains, which are no longer tending to grow in a single direction, meanwhile the deposits are of high purity and high density. The stress on the surface is reduced and the direction of the propagating cracks has been changed. The expansion of the crack can be effectively blocked.
Key words:  chemical vapor deposition  tungsten  residual stress  crack