| 摘要: |
| 采用离子束溅射和退火工艺，在K9玻璃基体上制备了氧化钒薄膜，并对其微观形貌及组成进行了研究。SEM结果表明，所制备的氧化钒薄膜均匀致密，晶粒尺寸达纳米量级，平均约50nm。由XPS分析可知，薄膜中钒的价态为+4价和+5价，薄膜由VO2和V2O5组成。自行研制了一套实时测量、动态显示测量结果的电阻—温度关系测试系统。应用该测试系统测量了薄膜电阻随温度变化的关系曲线，发现所制备的氧化钒薄膜具有显著的电阻突变特性，其低温段的激活能为0.3106eV，25℃时的电阻温度系数为-0.0406K-1 。 |
| 关键词: 氧化钒 薄膜 电学性质 |
| DOI： |
| 分类号: |
| 基金项目: |
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| Study on Electrical Properties of Vanadium Oxide Thin Film |
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Chen Xue-rong, Hu Jun-zhi, Han Wen-zheng
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Academy of Armored Force Engineering, Beijing 100072
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| Abstract: |
| Vanadium oxide thin film has been prepared by ion-sputtering and annealing. The substrate material was K9 glass. Its surface topography and composition were stadied. Scanning electron microscope (SEM) micrograph shows that the thin film is homogeneous and compact. The grain size is about 50nm. X-ray Photoelectron Spectroscopy (XPS) analysis indicates that valence state of element vanadium in this thin film contains +4 and +5, and So the thin film is composed of VO2 and V2O5. In order to know the relation between resistance and temperature of the vanadium oxide thin film, a testing system was developed which has the function of real-time collecting data and displaying testing result dynamically. Using this testing system, the curve of a relation between resistance and temperature was obtained. From the curve, it is found that this film has a distinct resistance switching characteristic. The activation energy of vanadium oxide thin film is 0.3106eV at a low temperature range. The temperature coefficient of resistance is about -0.0406K-1at 25℃. |
| Key words: vanadium oxide thin film electrical property |
