电-磁场协同增强HiPIMS技术的CrAl靶放电行为及CrAlN薄膜制备

李春伟; 田修波

引用本文:	李春伟,田修波.电-磁场协同增强HiPIMS技术的CrAl靶放电行为及CrAlN薄膜制备[J].中国表面工程,2022,35(5):155~162
	LI Chunwei^{1,2,TIAN Xiubo.CrAl Target Discharge Behavior of Electric and Magnetic Fields Synergistically Enhancing HiPIMS and Preparation of CrAlN Film[J].China Surface Engineering,2022,35(5):155~162}

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电-磁场协同增强HiPIMS技术的CrAl靶放电行为及CrAlN薄膜制备
李春伟,田修波

作者	单位
李春伟	东北林业大学工程技术学院哈尔滨 150040 ；哈尔滨工业大学先进焊接与连接国家重点实验室哈尔滨 150001
田修波	哈尔滨工业大学先进焊接与连接国家重点实验室哈尔滨 150001

摘要:

基于常规高功率脉冲磁控溅射(HiPIMS)存在的问题，发展了新型 HiPIMS 放电模式：电-磁场协同增强高功率脉冲磁控溅射((E-MF)HiPIMS)。研究新型放电模式下 CrAl 靶的放电行为及 CrAlN 薄膜的沉积特性。结果表明，不同工作气压下，CrAl 靶放电电流波形随靶脉冲电压的变化规律相似。随脉冲电压的增大，CrAl 靶脉冲峰值电流线性增加，随着氮气流量的增大，CrAl 靶脉冲峰值电流线性增加，随着复合直流的增大，CrAl 靶电流上升速度不变但靶脉冲峰值电流出现明显降低。与常规 HiPIMS 相比，(E-MF)HiPIMS 技术制备的 CrAlN 薄膜表面更加光滑、平整，且表面粗糙度仅为 4.123 nm。 CrAlN 薄膜的生长结构更加致密而紧凑，晶粒也更加细小、均匀。此外，(E-MF)HiPIMS 技术制备的 CrAlN 薄膜样品的摩擦因数显著降低，且磨损后的磨痕宽度小、磨损处仅出现间断型的表面磨损，摩擦磨损性能更加优异。同时样品的腐蚀电位较大提高、腐蚀电流大幅减小，表现出更优异的耐腐蚀性能。

关键词: 高功率脉冲磁控溅射 CrAl 靶放电特性 CrAlN 薄膜生长形貌

DOI：10.11933/j.issn.1007-9289.20220115001

分类号:TG174

基金项目:中央高校基本科研业务费专项(2572018BL09)、黑龙江省自然科学基金(LH2019E001) 和中国博士后科学基金(2016M590273)资助项目

CrAl Target Discharge Behavior of Electric and Magnetic Fields Synergistically Enhancing HiPIMS and Preparation of CrAlN Film

LI Chunwei^{1,2,TIAN Xiubo}

Abstract:

Based on the existing problems of conventional high power impulse magnetron sputtering (HiPIMS), a new HiPIMS discharge mode is developed: electro-magnetic field enhanced high power impulse magnetron sputtering (E-MF) hiPIMS. The discharge behavior of CrAl target and deposition characteristics of CrAlN films in the new discharge mode are studied. The results show that the discharge current waveform of CrAl target varies with the pulse voltage at different working pressures. The peak current of CrAl target pulse increases linearly with the increase of pulse voltage. The peak current of CrAl target pulse increases linearly with the increase of nitrogen flow rate. With the increase of composite DC, the rate of rise of CrAl target current remains unchanged but the peak current of target pulse decreases obviously. Compared with conventional HiPIMS, the surface of CrAlN film prepared by (E-MF) HiPIMS is more smoother and flat, and the surface roughness is only 4.123 nm. The growth structure of CrAlN films is more dense and compact, and the grains are smaller and more uniform. In addition, the friction coefficient of (E-MF) CrAlN thin film samples prepared by HiPIMS technology is significantly reduced, and the wear width is small, only intermittent surface wear occurs at the wear area, and the friction and wear performance is better. At the same time, the corrosion potential and corrosion current of the samples increased greatly, and the corrosion resistance is better.

Key words: high power pulse magnetron sputtering CrAl target discharge characteristics CrAlN films growth morphology