| 引用本文: | 崔岁寒,郭宇翔,陈秋皓,吴忠振.高功率脉冲磁控溅射仿真技术研究进展∗[J].中国表面工程,2022,35(5):23~41 |
| CUI Suihan,GUO Yuxiang,CHEN Qiuhao,WU Zhongzhen.Research Progress of Simulation Technique on High Power Impulse Magnetron Sputtering[J].China Surface Engineering,2022,35(5):23~41 |
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| 摘要: |
| 磁控溅射技术广泛用于制备多种功能涂层 / 薄膜材料，随着材料加工的精密化和功能器件的微型化，其已成为工业生产中必要环节。磁控溅射的发生基于等离子体放电，但由于等离子体负载的非线性和不稳定性，试验研究相对困难，促使其仿真技术在过去的几十年快速发展，并逐渐成为新型真空涂层装备开发和工艺验证重要且高效的手段。尤其是随着高离化磁控溅射等新技术的提出，等离子体的不确定性加强，检测越来越难，使仿真技术得到进一步的发展和推进。针对高功率脉冲磁控溅射(HiPIMS)技术，对近年来等离子体仿真技术研究进展及其在 HiPIMS 放电机理和等离子体特性方面的应用进行综述。以多种等离子体仿真模型为切入点，分别介绍检验电子 Monte Carlo 模型、流体模型、粒子网格 / 蒙特卡洛(PIC / MCC) 模型、参数路径模型以及整体模型等仿真模型的原理、优缺点及其在 HiPIMS 技术研究中的贡献和不足。随着等离子体放电技术的进步，等离子体特性越来越复杂，等离子体仿真技术也相应地向更高维度、精度和自由度的方向不断升级，最后总结等离子体仿真技术的研究方向，并对其发展及其对 HiPIMS 可能的推动作用进行展望。 |
| 关键词: 高功率脉冲磁控溅射(HiPIMS) 仿真技术 高精度 高强度放电 等离子体特性 |
| DOI：10.11933/j.issn.1007?9289.20211226003 |
| 分类号:O539 |
| 基金项目:深圳市科技计划(SGDX20201103095406024 和 JSGG20191129112631389)、北京大学深圳研究生院引进人才科研启动经费(1270110273)和深圳市人力资源和社会保障局-博士后出站科研资助经费(2129933651)资助项目 |
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| Research Progress of Simulation Technique on High Power Impulse Magnetron Sputtering |
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CUI Suihan, GUO Yuxiang, CHEN Qiuhao, WU Zhongzhen
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School of Advanced Materials,Peking University Shenzhen Graduate School,Shenzhen 518055 ,China
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| Abstract: |
| Magnetron sputtering (MS) technique is widely used to prepare various functional coating materials. With the increase of the material processing accuracy and the miniaturization of functional devices, MS is become a necessary part in industrial production. However, due to the fact that MS is based on the plasma discharge which is nonlinear and unstable, experimental studies on MS are relatively difficult. Consequently, simulation technique is rapidly developed in the past few decades and gradually become an important and efficient method of the vacuum equipment development and the process validation. In particular, with the development of high ionization magnetron sputtering, the detection of the plasma becomes more and more difficult because of the increasing uncertainty, further promoting the development of the simulation technique. Aimed at high power impulse magnetron sputtering (HiPIMS), the recent research progress of plasma simulation technique and its application in investigating the discharge mechanism and the plasma characteristics of HiPIMS are reviewed. Five models are introduced in detail, including test-electron Monte Carlo model, fluid model, particle-in-cell / Monte Carlo collision model, pathway model and global model. Their principles, advantages, disadvantages, contributions and shortcomings in HiPIMS research are discussed, respectively. At present, plasma simulation technique is constantly upgrading towards higher dimensions, accuracy and freedom, because the plasma properties are more and more complex with the progress of the plasma discharge technique. Finally, the research direction of plasma simulation technique is summarized, and its development and possible promotion to HiPIMS are prospected |
| Key words: high power impulse magnetron sputtering (HiPIMS) simulation technique high precision high ionization discharge plasma properties |
