| 摘要: |
| 利用胶体二氧化硅在胺的辅助下对硅片进行抛光是微电子工业中的一种典型制造工艺,其动力学过程仍然不清楚。 研究了在硅抛光中加入不同浓度乙二胺( EDA)对抛光速率的影响,结果表明 EDA 浓度提高时,硅的抛光速率逐渐增大,并且在质量分数 5%时增加 74. 5%。 为了揭示其中的作用机理,对 EDA 和 Si 在水中的电离性质作了分析,对硅片表面在 EDA 碱性溶液中的接触角以及 Si 经过 EDA 溶液浸泡后的表面作了 X 射线光电子能谱(XPS)测试,进一步采用基于反应力场的分子动力学模拟了动态反应过程。 分析表明 EDA 和硅片表面不仅有强烈的库仑吸附作用,且 Si 和 EDA 通过 Si-N 进一步形成化学键,其中 EDA 中的 N 原子与硅表面原子能形成两种结构,使附近的 Si-Si 和 Si-O 键极化。 基于这些测试,最终解释了硅在含有 EDA 碱性抛光液中的抛光动力学过程,此作用机制可为硅衬底加工的抛光液研制提供一定的技术指导。 |
| 关键词: 化学机械抛光 硅片 抛光速率 X 射线光电子能谱 (XPS) 反应动力学 |
| DOI：10.11933/j.issn.1007-9289.20210413002 |
| 分类号:TH117 |
| 基金项目:安徽省高校自然科学基金(KJ2020A0091)、电子信息系统仿真设计安徽省重点实验室开放课题(2019ZDSYSZB02)和安徽省高校优秀人才支持计划(gxyq2020042)资助项目 |
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| Mechanism Study on Silicon CMP Using Ethylenediamine |
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WANG Haibo1,2, JIANG Xianwei1,2
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1.School of Electronic Information and Electrical Engineering, Hefei Normal University, Hefei 230601 , China;2.Anhui Province Key Laboratory of Simulation and Design for Electronic Information System, Hefei 230601 , China
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| Abstract: |
| Silicon polishing using colloidal silica with assistance of amine is a typical manufacturing process in micro electronics industry,which kinetic process is still unclear. The effect of different concentrations of ethylenediamine (EDA) on the polishing rate was studied. The results showed that the polishing rate of silicon increased gradually with the increase of EDA concentration, and by 74. 5% at 5%. In order to reveal the mechanism of the action, the ionization properties of EDA and Si in water were analyzed, the contact angle of the silicon surface in EDA alkaline solution and the X-ray photoelectron spectroscopy (XPS) of Si soaked in EDA solution were tested, the dynamic reaction process was also simulated by the molecular dynamic simulation based on reaction force field. The results show that the surface of EDA and silicon wafer not only has strong Coulomb adsorption, but also Si and EDA form chemical bonds through Si-N atoms in EDA, which polarizes the nearby Si-Si and Si-O bonds. Based on these tests, the polishing dynamics of silicon in the alkaline polishing slurry containing EDA is explained. The mechanism could provide some technical guidance for the development of polishing slurry for silicon substrate processing. |
| Key words: chemical mechanical polishing ( CMP ) silicon wafer removal rate X-ray photoelectron spectroscopy ( XPS ) reaction kinetics |
