引用本文:张帅,罗积润,王小霞,张瑞,吴质洁,冯海蛟.电流密度对电沉积铜膜剩余电阻率的影响∗[J].中国表面工程,2021,34(4):60~66
ZHANG Shuai,LUO Jirun,WANG Xiaoxia,ZHANG Rui,WU Zhijie,FENG Haijiao.Effects of Current Density on Residual Resistivity Ratio of Electrodeposited Copper Films[J].China Surface Engineering,2021,34(4):60~66
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电流密度对电沉积铜膜剩余电阻率的影响∗
张帅1,2, 罗积润1,2, 王小霞1, 张瑞1, 吴质洁1, 冯海蛟3
1.中国科学院空天信息创新研究院微波器件与系统研究发展中心 北京 100094;2.中国科学院大学电子电气与通信工程学院 北京 100049;3.中核环保有限公司 北京 100016
摘要:
为了获得 1. 3 GHz 功率耦合器的镀铜膜,研究不同电流密度和沉积时间对镀铜膜剩余电阻率(RRR)的影响。 电流密度分别为 1、1. 5 和 2 A/ dm2 ,沉积时间为 1~ 6 h,讨论了铜膜 RRR 值、微观形貌、表面粗糙度和织构随镀层厚度的变化。 结果表明,随着电流密度减小和沉积时间延长,表面粗糙度变大,铜膜 RRR 值增大。 在电流密度为 1 和 1. 5 A/ dm2 下沉积的铜膜,随着沉积时间的增加,晶胞结节变大,(111)晶面的织构系数增加,铜膜 RRR 值变大。 在电流密度为 2 A/ dm2 下沉积的铜膜中含有孔洞缺陷,导致铜膜的 RRR 值显著下降。 硬 X 射线自由电子激光装置的 1. 3 GHz 功率耦合器的铜膜采用电流密度为 1 A/ dm2 ,沉积时间为 4 h 的镀铜工艺,其铜膜 RRR 值、铜膜与基体结合力、高低温适应性以及微波功率均满足实际工程应用。
关键词:  电镀铜膜  电流密度  微观形貌  织构  剩余电阻率
DOI：10.11933/j.issn.1007-9289.20210201001
分类号:TG153;TN12
基金项目:国家自然科学基金资助项目(61771454)
Effects of Current Density on Residual Resistivity Ratio of Electrodeposited Copper Films
ZHANG Shuai1,2, LUO Jirun1,2, WANG Xiaoxia1, ZHANG Rui1, WU Zhijie1, FENG Haijiao3
1.Research and Development Center for Microwave Devices and Systems, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094 , China;2.School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 , China;3.CNNC Environment Protection Co.,Ltd, Beijing 100016 , China
Abstract:
In order to obtain copper coating of 1. 3 GHz power coupler, the effects of current density and deposition time on the residual resistivity ratio (RRR) of copper coating were investigated. Copper films were electrodeposited with current densities of 1, 1. 5 and 2 A/ dm2 , respectively, and deposition times varied from 1 to 6 h. The changes of the RRR value, microstructure, surface roughness and texture of copper films with coating thickness were discussed. The results show that the RRR value of copper films and the surface roughness increase with the decrease of current density and the increase of deposition time. Moreover, an increasing of the texture coefficient of ( 111 ) crystal plane and larger nodule of copper films tend to increase the RRR value of copper films, which electrodeposited at the current densities of 1 and 1. 5 A/ dm2 . The RRR value of the copper films deposited at the current density of 2 A/ dm2 decreases significantly due to the existence of holes defects of the copper films. The copper plating process with current density of 1 A/ dm2 and deposition of 4 h was applied to the 1. 3 GHz power coupler of hard X-ray free electron laser device. The RRR value of copper films, the adhesion between copper film and substrate, high and low temperature adaptability and microwave power meet the engineering application.
Key words:  electrodeposited copper film  current density  surface morphology  texture  residual resistivity ratio
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