引用本文:赵文杰，曾志翔，王立平，陈建敏，薛群基.规则织构化硅片表面的制备及其润湿行为[J].中国表面工程,2011,24(3):4~10
ZHAO Wen-jie, ZENG Zhi-xiang, WANG Li-ping, CHEN Jian-min, XUE Qun-ji.Fabrication and Wetting Behaviors of Regular Textured Silicon Surfaces[J].China Surface Engineering,2011,24(3):4~10
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规则织构化硅片表面的制备及其润湿行为
赵文杰，曾志翔，王立平，陈建敏，薛群基1,2
1. 中国科学院宁波材料技术与工程研究所 表面工程事业部，宁波 315201;2. 中国科学院兰州化学物理研究所 固体润滑国家重点实验室，兰州 730000
摘要:
采用感应耦合等离子体刻蚀技术实现了不同形状和几何参数的规则织构化硅片表面的构筑与制备。主要以三种典型的规则织构包括圆柱状、圆坑状和沟槽状表面为研究对象，系统考察了织构形状和几何参数对表面润湿行为的影响规律。研究结果表明：随着织构高度、深度和表面覆盖率的增加，规则织构化硅片表面疏水性能增强，规则织构化表面疏水性能随着表面粗糙度的增加而增强。不同的几何形貌对硅片表面接触角的影响强度是不同的，相对于柱状与沟槽状织构，坑状织构在较小的表面粗糙度时可得到较大的接触角。当表面的接触角均为101°时，坑状、柱状、沟槽状织构的表面粗糙度分别为16.2 nm，29.2 nm和70.2 nm。
关键词:  规则织构化  形状  几何参数  润湿性
DOI：
分类号:
基金项目:浙江省宁波市引进院士团队项目(2009A31004)；中国科学院兰州化物所固体润滑国家重点实验室开放课题项目(No.1004)；浙江省自然科学基金(Y4110283)
Fabrication and Wetting Behaviors of Regular Textured Silicon Surfaces
ZHAO Wen-jie, ZENG Zhi-xiang, WANG Li-ping, CHEN Jian-min, XUE Qun-ji1,2
1. Surface Engineering division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences，Ningbo 315201;2. State Key Laboratory of Solid Lubrication，Lanzhou Institute of Chemical Physics，Chinese Academy of Sciences, Lanzhou 730000
Abstract:
Regular textured silicon surfaces with various shape and different geometrical parameters were successfully designed and prepared using inductively coupled plasma (ICP) etching technology. With focus on the three kinds of typical textured silicon surfaces including pillar, dimple and groove in this study, influences of texture shape and geometrical parameters on the wetting behaviors of textured surfaces were systematically evaluated. The results show that wetting behaviors of textured silicon surfaces were closely related to the texture shapes and geometrical parameters. With the increasing of surface roughness, regular textured surfaces became more hydrophobic. Silicon wafers with different geometric morphology had different influences on their surface contact angles. Compared with pillar and groove pattern, silicon surface with dimple pattern exhibited larger contact angle value even with a lower surface roughness. In order to get the same contact angle of 101°, the roughness of silicon surfaces with dimple, pillar and groove patterns were 16.2 nm， 29.2 nm and 70.2 nm, respectively.
Key words:  regular texture  shape  geometrical parameters  wetting behavior
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