硼膜多步骤注N的镀层结构研究

唐云; 张平; 谭俊; 蔡志海

引用本文:	唐云,张平,谭俊,蔡志海.硼膜多步骤注N的镀层结构研究[J].中国表面工程,2002,(4):25~27
	.Study on Microstructureof Polyenergetic Nitrogen Ion Implanted Boron Film[J].China Surface Engineering,2002,(4):25~27

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硼膜多步骤注N的镀层结构研究
唐云,张平,谭俊,蔡志海

作者

单位

摘要:

用离子束溅射硼靶，在W6o5Cr4V2钢上宙积一层硼膜，再用反冲注入法注氮以形成氮化硼（BN），注入时采用逐次递减能量（即50kV,30keV,10keV0的多步骤注入。用XPS分析膜的成分深度分布及元素的化学价态；用傅立叶红外（FTIR）反射谱分析膜的结构，结果表明：膜基界面产生混合，与用单一能量注入相比，多步骤注入时，膜层的N／B分布比较均匀；硼在膜中以BN形式存在，膜深度较大处为a-BN或h-BN，并且随着深度的降低，膜有向c-BN转化的趋势。

关键词: 硼膜镀层离子注入氮化硼结构

DOI：

分类号:TG174.444

基金项目:国家自然科学基金资助项目(59971065)

Study on Microstructureof Polyenergetic Nitrogen Ion Implanted Boron Film

TANG Yun ZHANG Ping TAN Jun CAI Zhi-hai

Abstract:

Boron films were deposited on W6Mo5Cr4V2 high speed steel using ion beam sputtering from boron target and implanted with polyenergetic(50 keV, 30 keV, 10 keV) nitrogen ions. The implanted films were characterized by X-ray Photoelectron Spectroscopy (XPS) and Fourier Infrared (FTIR) spectroscopy. The concentration profiles of XPS analysis showed an interfacial mixing between film and substrate. Compared with monoenergetic ion implantation, polyenergetic ion implanted films displayed an even N/B distribution. Boron existed in the form of boron nitride as a-BN or h-BN, with the depth decreasing, it showed a tendency to transform to c-BN.

Key words: implantation,boron nitride,microstructure