| 摘要: |
| 为了实现大面积金刚石膜的高速均匀沉积，在新型多模微波等离子体装置中，利用微波等离子体（Microwave plasma chemical vapor deposition，MPCVD）技术，对大面积金刚石膜沉积过程中气体流场、电子密度和温度、基团分布及金刚石膜质量进行研究。流场模拟结果表明，多模MPCVD装置在高气体流量下依旧保持良好的流场稳定性。等离子体光谱结果表明，随着氢气流量的上升活性基团的强度上升。氢气流量在400 cm3/min以内时，活性基团可在基底表面对称均匀分布。电子密度和电子温度随着氢气流量的上升先上升后下降，在500 cm3/min达到最大，分别为2.3×1019/m3和1.65 eV。在氢气流量为300 cm3/min时可在直径为100 mm的钼基底上实现大面积金刚石膜的均匀沉积，金刚石膜中心和边缘处拉曼光谱FWHM值为4.39 cm-1和4.51 cm-1，生长速率为5.8 μm/h。 |
| 关键词: 微波等离子体化学气相沉积 等离子体光谱 金刚石膜 大面积 均匀沉积 |
| DOI：10.11933/j.issn.1007-9289.20171018002 |
| 分类号:TG174.444 |
| 基金项目:湖北省教育厅基金（W20151517） |
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| Effects of Hydrogen Flow Rate on Deposition of Large Area Diamond Films |
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SUN Qi1,2, WANG Jian-hua1, LIU Fan1, WENG Jun1
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1.School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430070;2.No. 719 Research Institute, China Shipbuilding Industry Corporation, Wuhan 430064
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| Abstract: |
| In order to achieve the uniform deposition of large area diamond films with the high growth rate, the gas flow field, electron density, electron temperature, the species distribution and the quality of the diamond film were investigated by the microwave plasma chemical vapor deposition (MPCVD) method in a novel self-built overmoded MPCVD device. The gas flow field results indicate that the overmoded MPCVD presents good stability of the gas flow field even at a high gas flow rate. The optical emission spectroscopy (OES) results indicate that the intensities of all chemical radicals increase with the increase of the hydrogen flow rate. The chemical radicals can be systematically distributed along the substrate surface when the gas flow rate is within 400 cm3/min. The electron density and electron temperature first increase and then slightly decrease when the gas flow rate keeps increasing. The maximum values of the electron density and electron temperature are 2.3×1019/m3 and 1.65 eV, respectively, when the hydrogen flow rate is 500 cm3/min. The uniform diamond film is deposited on the molybdenum plate of 100 mm diameter when the hydrogen flow rate is 300 cm3/min. The FWHM value is 4.39 cm-1 and 4.51 cm-1 for the center and verge place of the diamond film, respectively, and the growth rate is 5.8 μm/h. |
| Key words: microwave plasma chemical vapor deposition (MPCVD) optical emission spectroscopy (OES) diamond film large area uniform deposition |
