| 摘要: |
| 团簇离子束是带电的团簇，可以在电场、磁场作用下加速、传输或偏转，形成几个eV到几个MeV能量的离子束。文中阐述了团簇离子束的基本概念、产生方法和主要应用。大尺寸气体团簇和硼基团簇必须用高压气体超声绝热膨胀方法产生，然后通过电子碰撞电离形成团簇正离子。硼团簇用于超浅结制备，实现了结深为10~20 nm的超浅注入；包含数千原子的大团簇则被用于半导体的表面平化，获得了粗糙度在0.7 nm以下的平滑表面。用铯溅射离子源可以产生几个到几十个原子的负离子小团簇，包括B、C、F、Si及其分子团簇（SiB、GeB）。其中，硼基分子团簇离子束已用于对半导体进行瞬态增强扩散掺杂，与半导体表面的离子注入非晶化工艺相结合，实现了接近纳米量级的超浅注入。碳系团簇最近被用于超薄材料制备，获得了单层和双层石墨烯，并发现团簇离子束引起的非线性辐照损伤对石墨烯的形成具有重要影响。结果表明：团簇离子技术在超大集成电路和新型超薄纳米材料制备等领域具有广泛的应用前景。 |
| 关键词: 团簇离子束 离子加工 表面平化 超浅结 石墨烯 |
| DOI：10.11933/j.issn.1007-9289.2014.06.003 |
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| Progress in Clusters Ion Beam with Nanoscale Manufacturing Technology |
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ZHANG Zaodi, LI Hui, WANG Zesong, FU Dejun
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School of Physics and Technology, Wuhan University, Wuhan 430072
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| Abstract: |
| Cluster is an intermediate state between atoms and molecules and condensed matter, and its is a model matter state for studying the physical and chemical properties of nanoscale materials. Cluster ion beam is charged state clusters and it can be accelerated, transmitted or deflected under an electric field or magnetic field, forming ion beams of several eV to a few MeV. This paper reviews the basic concept, generating method and main application of the cluster ion beams. Large size gas clusters and boroncontaining clusters have been produced by supersonic adiabatic expansion from high pressures, followed by electron impact ionization to form cluster ions. Boron cluster beams have been used for fabrication of ultrashallow junctions with junction depths of 1020 nm. Large clusters containing thousands of atoms are used for surface smoothing of semiconductors, resulting in smooth surfaces with rootmeansquare roughness down to 0.7 nm. Cesium sputtering ion sources are used to produce negative small cluster containing several to tens of atoms, including B, C, F, Si and their molecular clusters (SiB, GeB). Among them, boroncontaining molecular cluster ion beams have been applied to transient enhanced diffusion doping of semiconductors, which also leads to ultrashallow implantation down to nanoscale when combined with ion beam amorphization of the surface layer. Most carbon clusters are recently used for preparation of ultrathin material such as monolayer and bilayer graphene, and it is found that nonlinear irradiation damage induced by the cluster ion beam has an evident influence on the formation of graphene. The results indicate that the cluster ion beam technology has a broad application prospect in fabrication ultralarge integrated circuit devices and synthesis of novel ultrathin nanomaterials. |
| Key words: clusters ion beam ion beam manufacturing surface smoothing ultrashallow junction graphene |
