| 摘要: |
| 以H2和CH4作为反应气体，采用热丝化学气相沉积法（HFCVD）在钛合金（Ti6Al4V）平板基体上制备金刚石薄膜，利用扫描电镜（SEM）、X射线衍射仪（XRD）、激光拉曼光谱（Raman）和洛氏硬度仪分析薄膜的表面形貌、结构、成分和附着性能，研究了高温形核低温生长的梯度降温法对原始钛合金和反应磁控溅射TiC过渡层的钛合金表面沉积金刚石薄膜的影响。结果表明：原始基体区和TiC过渡层区沉积的金刚石薄膜平均尺寸分别为0.77 μm和0.75 μm，薄膜内应力分别为-5.85 GPa和-4.14 GPa，TiC层的引入可以有效提高金刚石的形核密度和晶粒尺寸的均匀性，并减少薄膜残余应力；高温形核低温生长的梯度降温法可以有效提高金刚石的形核密度和质量，并提高原始基体上沉积金刚石薄膜的附着性能。 |
| 关键词: 金刚石 过渡层 梯度降温 温度 热丝化学气相沉积 |
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| 基金项目:粉末冶金国家重点实验室开放基金（20110933K）；中央高校基本科研业务费专项资金资助（2012QNZT002） |
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| Sputtered TiC Interlayer on Diamond Films on Ti6AlV4 Alloy by HFCVD |
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YU Zhi-ming, ZHANG Yi-hao, WEI Qiu-ping, LIU Dan-ying, MENG Ling-cong
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a. School of Materials Science and Engineering b. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083
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| Abstract: |
| Diamond films were deposited on Ti6Al4V substrates with the mixture gas of methane and hydrogen by hot filaments chemical vapor deposition (HFCVD). The surface structure and crosssection morphology was observed by scanning electron microscopy (SEM) and atomic force microscope (AFM), the components were investigated using Xray diffraction (XRD) and laser Raman spectrum, and the adhesion of diamond film was characterized by Rockwell hardness tester. A TiC interlayer was deposited on the substrate using reactive magnetron sputtering. Diamond films were grown on original and TiC coated Ti6Al4V substrates with decreasing substrate temperature gradually during the CVD diamond growth. The effects of gradient substrate temperature and reactive sputtered TiC interlayer on the diamond films by HFCVD were investigated. The results show that the average size of diamond films on original and TiC coated Ti6Al4V substrates is 0.77 μm and 0.75 μm, respectively, and the film internal stress is -5.85 GPa and -4.14 GPa, respectively. A TiC interlayer with appropriate seeding pretreatment is shown to play an important role in improving the nucleation and quality and decreasing the residual stress of the diamond film, relative to that shown by substrates without such pretreatment. |
| Key words: diamond interlayer gradient cooling temperature hot filaments chemical vapor deposition(HFCVD) |
