| 摘要: |
| 采用自主研制的45°单弯曲磁过滤阴极电弧沉积系统于Si基体表面制备了四面体非晶碳(ta–C)膜，研究了基体负偏压对薄膜沉积速率、成分、力学性能及摩擦学性能的影响规律。结果表明，随基体负偏压升高，ta–C膜sp3键含量呈先增后减的变化趋势，在-50 V时达到最大值（约64%）；其硬度和弹性模量呈相似的变化规律，在-50 V偏压下获得最大值(48.22 GPa和388.52 GPa)。ta–C薄膜的摩擦学性能与其sp3碳杂化键的含量密切相关，在-50 V偏压下制备的薄膜具有最小平均摩擦系数值（0.10）。可见，采用单弯曲磁过滤阴极弧电弧制备ta–C薄膜的力学和摩擦学特性主要受薄膜中sp3键含量的制约。 |
| 关键词: 单弯曲阴极真空电弧 偏压 四面体非晶碳膜 sp3 |
| DOI： |
| 分类号: |
| 基金项目:浙江省自然科学基金（Y4100312） |
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| Effect of Substrate Bias on Structure and Properties of Ta–C Films |
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CAI Jian, YANG Wei, DAI Wei, KE Pei–ling, WANG Ai–ying
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Division of Surface Engineering and Remanufacturing, Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201
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| Abstract: |
| Tetrahedral amorphous carbon（ta–C) films were prepared to study the deposition rate, composition, mechanical features and tribological properties as a function of substrate bias at a homemade 45°single bent filtered cathodic vacuum arc deposition system. The results show that the sp3 content in the film first ascends and then descends with the increasing of the substrate bias. When the bias is -50 V, the content reaches the highest value of 64%, which leads to the observed maximum hardness and Young’s modulus at 48.22 GPa and 388.52 GPa, respectively. Furthermore, the minimum average coefficient of friction at 0.1 is also acquired for the taC film deposited at -50 V. Therefore the sp3 content dominates the mechanical and tribological properties of deposited films. |
| Key words: single bent FCVA negative bias ta–C sp3 bond |
