| 引用本文: | 孙薇薇,田修波,李慕勤,吴明忠,巩春志,田钦文.偏压对自源笼形空心阴极放电制备Si-DLC薄膜结构和性能的影响[J].中国表面工程,2019,32(3):69~79 |
| SUN Weiwei,TIAN Xiubo,LI Muqin,WU Mingzhong,GONG Chunzhi,TIAN Qinwen.Effects of Bias Voltage on Structure and Property of Si-DLC Films Fabricated by Self-source Cage Type Hollow Cathode Discharge Process[J].China Surface Engineering,2019,32(3):69~79 |
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| 偏压对自源笼形空心阴极放电制备Si-DLC薄膜结构和性能的影响 |
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孙薇薇1,2, 田修波1, 李慕勤1,3, 吴明忠3, 巩春志1, 田钦文1
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1.哈尔滨工业大学 先进焊接与连接国家重点实验室, 哈尔滨 150001;2.佳木斯大学 理学院, 佳木斯 154007;3.佳木斯大学 材料科学与工程学院, 佳木斯 154007
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| 摘要: |
| 针对利用笼形空心阴极放电在大工件表面制备DLC薄膜时，笼网内大工件操作困难、大工件影响放电的问题，开发了自源笼形空心阴极放电方法，在不同偏压（-300~0 V）条件下于Si （100）表面制备了Si-DLC薄膜，考察了偏压对Si-DLC薄膜结构和性能的影响。结果表明：获得Si-DLC的沉积速率达到7.90 μm/h。由偏压引起的高能离子轰击使薄膜的组织结构更为致密，降低了表面粗糙度和H含量。Si-DLC薄膜中的sp3/sp2值随偏压增加先上升后下降，薄膜纳米压入硬度和弹性模量也呈现相同规律。偏压为-200 V沉积的Si-DLC薄膜具有最高的sp3/sp2（0.69）、H/E和H3/E2值，表现出致密的结构和优异的摩擦性能，摩擦因数低至0.024，磨损率为1×10-6 mm3/Nm。说明自源笼形空心阴极放电是一种有效制备大面积DLC膜的工艺，-200 V偏压是最优化的参数。 |
| 关键词: 自源笼形空心阴极放电 Si-DLC 偏压 显微结构 力学性能 摩擦学性能 |
| DOI：10.11933/j.issn.1007-9289.20190114002 |
| 分类号:TG174.444 |
| 基金项目:国家自然科学基金（11675047，51811530059），黑龙江省自然科学基金（E2015039） |
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| Effects of Bias Voltage on Structure and Property of Si-DLC Films Fabricated by Self-source Cage Type Hollow Cathode Discharge Process |
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SUN Weiwei1,2, TIAN Xiubo1, LI Muqin1,3, WU Mingzhong3, GONG Chunzhi1, TIAN Qinwen1
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1.State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;2.School of Science, Jiamusi University, Jiamusi 154007, China;3.School of Materials Science and Engineering, Jiamusi University, Jiamusi 154007, China
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| Abstract: |
| To solve the problems of difficult operation of large workpieces in the meshed cage and the influence of large workpieces on the discharge when using the meshed cage hollow cathode discharge to prepare DLC film on the surface of large workpieces, a self-source cage type hollow cathode discharge method was developed. Si-DLC films were deposited on Si (100) wafers at different bias voltage (-300~0 V) using a self-source cage type hollow cathode discharge process. The influence of bias on the structure and properties of Si-DLC films was investigated. The results show that the deposition rate of Si-DLC films reach 7.90 μm/h. The high-energy ion bombardment caused by bias significantly densifies the films, and reduces the surface roughness and H contents. The sp3/sp2 value in the Si-DLC film firstly increases and then decreases with the increase of bias, and the nano-hardness and elastic modulus of the film show the same rule. The Si-DLC films deposited with a bias of -200 V have the highest sp3/sp2 value (0.69), H/E and H3/E2, and show excellent anti-friction performance with a friction coefficient as low as 0.024 and a wear rate of 1×10-6 mm3/Nm. It is indicated that the self-source cage type hollow cathode discharge is an effective process for the preparation of large-area DLC film. The -200 V bias is the optimal parameter. |
| Key words: self-source cage type hollow cathode discharge Si-DLC bias voltage microstructure mechanical property tribological property |
