| 引用本文: | 钟敏,袁任江,李小兵,陈建锋,许文虎.磨粒和抛光垫特性对蓝宝石超声化学机械抛光的影响[J].中国表面工程,2018,31(6):125~132 |
| ZHONG Min,YUAN Renjiang,LI Xiaobing,CHEN Jianfeng,XU Wenhu.Effects of Abrasive Particles and Pads’ Characteristics on Ultrasonic Assisted Chemical Mechanical Polishing for Sapphire[J].China Surface Engineering,2018,31(6):125~132 |
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| 磨粒和抛光垫特性对蓝宝石超声化学机械抛光的影响 |
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钟敏1,2, 袁任江1, 李小兵1,2, 陈建锋1,2, 许文虎1,2
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1.南昌大学 机电工程学院, 南昌 330031;2.南昌大学 摩擦学重点实验室, 南昌 330031
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| 摘要: |
| 抛光磨粒和抛光垫对蓝宝石超声化学机械抛光起重要作用，为研究磨粒和抛光垫特性对蓝宝石材料抛光效率和质量的影响，利用自制超声弯曲振动辅助化学机械抛光装置，研究金刚石、氧化铝和二氧化硅3种不同磨粒，以及表面多孔且无沟槽的聚氨酯抛光垫、IC1000抛光垫、IC1000和SubaⅣ复合抛光垫对蓝宝石材料去除率及抛光后表面粗糙度的影响。由质量损失求得的去除率和原子力显微镜表面形貌测试结果表明：二氧化硅抛光液的去除率3.2 μm/h接近氧化铝抛光液去除率3.8 μm/h，远大于金刚石抛光液去除率0.3 μm/h，且其抛光后的蓝宝石表面光滑、无损伤；3种抛光垫抛光后的蓝宝石粗糙度接近，约0.10 nm，但聚氨酯抛光垫的去除率为3.2 μm/h，远大于IC1000抛光垫的去除率1.9 μm/h及复合垫的去除率1.6 μm/h。二氧化硅抛光液和聚氨酯抛光垫适宜蓝宝石超声化学机械抛光工艺，可获得高去除率和原子级光滑表面。 |
| 关键词: 蓝宝石 超声弯曲振动 化学机械抛光 抛光液 抛光垫 |
| DOI：10.11933/j.issn.1007-9289.20180824002 |
| 分类号:TG175 |
| 基金项目:国家自然科学基金（51865030）；江西省重大研发专项（20173ABC28008） |
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| Effects of Abrasive Particles and Pads’ Characteristics on Ultrasonic Assisted Chemical Mechanical Polishing for Sapphire |
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ZHONG Min1,2, YUAN Renjiang1, LI Xiaobing1,2, CHEN Jianfeng1,2, XU Wenhu1,2
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1.School of Mechatronics Engineering, Nanchang University, Nanchang 330031, China;2.Key Laboratory of Tribology, Nanchang University, Nanchang 330031, China
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| Abstract: |
| Different abrasive particles and polishing pads have important impact on ultrasonic flexural vibration assisted chemical mechanical polishing (UFV-CMP) for the sapphire. Such effect was investigated using a self-made UFV-CMP equipment. The particles were diamond, alumina and silica. The pads were polyurethane pad with porous surface and no grooves, IC1000 pad, and IC1000/SubaⅣcompound pad. The MRRs based on weight reduction show that the sapphire MRR of the silica slurry is 3.2 μm/h. It is close to 3.8 μm/h for the alumina slurry and much bigger than that of of the diamond slurry, 0.3 μm/h. Moreover, the sapphire surface polished by the silica slurry is smooth without damage observing from AFM. The roughness of the polished sapphire caused by different polishing pads is similar to be about 0.1 nm. However, the sapphire MRR of the polyurethane pad is 3.2 μm/h, much bigger than 1.9 μm/h of the IC1000 pad and 1.6 μm/h of the IC1000/SubaⅣ compound pad. Therefore, the silica slurry and polyurethane pad are suitable for sapphire UFV-CMP to simultaneously obtain high MRR and atomically smooth surface. |
| Key words: sapphire ultrasonic flexural vibration chemical mechanical polishing polishing slurry polishing pad |
