| 引用本文: | 杜晓明,郑凯峰,王燕,李新喜,张罡,黄朝强.基于X射线反射研究溅射工艺对CrAlN/TiAlN周期膜界面结构的影响[J].中国表面工程,2018,31(1):67~73 |
| DU Xiao-ming,ZHENG Kai-feng,WANG Yan,LI Xin-xi,ZHANG Gang,HUANG Chao-qiang.Effects of Sputtering Process on Interfacial Structure of CrAlN/TiAlN Nano-scale Multilayer by X-ray Reflectometry[J].China Surface Engineering,2018,31(1):67~73 |
|
| 摘要: |
| 为研究X射线反射技术在纳米多层膜界面微结构表征中的应用，采用反应磁控溅射技术在单晶硅基片上制备CrAlN/TiAlN纳米周期膜，利用X射线反射技术系统研究溅射工艺参数对CrAlN/TiAlN纳米周期膜界面微结构的影响规律。结果表明：增加铝靶功率可提高膜层的溅射速率和降低膜层的界面粗糙度，然而较高的铝靶功率会使膜层界面出现严重的弥散；较大和较小的负偏压都不利于形成完整的周期膜调制结构和光滑的界面；提高Ti/Cr靶电流可有效改善周期膜的调制界面结构，但太大的靶电流会导致膜层间扩散加重，形成弥散界面。N2流量与Ar流量对膜层界面粗糙度具有相反的影响作用。试验得到的优化工艺参数为：铝靶功率80 W，溅射负偏压-200 V，Ti/Cr靶电流0.2 A，N2流量30 cm3/min，Ar流量10 cm3/min。 |
| 关键词: 磁控溅射 纳米周期膜 CrAlN/TiAlN X射线反射 界面微结构 |
| DOI：10.11933/j.issn.1007-9289.20170822002 |
| 分类号: |
| 基金项目:辽宁省教育厅科研基金（LG201620）；中国工程物理研究院中子物理学重点实验室开放基金（2014BB05） |
|
| Effects of Sputtering Process on Interfacial Structure of CrAlN/TiAlN Nano-scale Multilayer by X-ray Reflectometry |
|
DU Xiao-ming1, ZHENG Kai-feng1, WANG Yan2, LI Xin-xi2, ZHANG Gang1, HUANG Chao-qiang2
|
|
1.School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110159;2.Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan
|
| Abstract: |
| In order to study the application of X-ray reflectometry in the characterization of interface microstructures of nano-scale multilayer, CrAlN/TiAlN nano-scale multilayers were fabricated by RF-reactive magnetron sputtering. X-ray reflectometry method was used to investigate the effects of deposition parameters on interfacial structure of CrAlN/TiAlN nano-scale multilayer. The results show that the increase of the power of the aluminum target can improve the sputtering rate and reduce the interface roughness of the multilayers. However, the high power of the aluminum target causes serious dispersion of the interface. Larger and smaller negative bias is detrimental to the formation of the complete multilayers with good modulation structures and smooth interfaces. Optimizing the target current of Ti/Cr can effectively improve the modulation structure of the multilayers. While the higher target current will lead to diffusion between the films and form a diffusion interface. N2 flow rate and Ar flow rate have opposite effects on the interface roughness. According to the experimental results, the optimized magnetron sputtering process parameters are obtained as: aluminum target power of 80 W, sputtering negative bias of -200 V, Ti/Cr target current of 0.2 A, N2 flow rate of 30 cm3/min and Ar flow rate of 10 cm3/min. |
| Key words: magnetron sputtering nano-scale multilayer CrAlN/TiAlN X-ray reflectometry interface microstructure |
