引用本文:邵涛,孙德恩,梁斐珂,黄佳木.离子源循环轰击对磁控溅射TiN薄膜结构和电学性能的影响[J].中国表面工程,2017,30(1):77~82
SHAO Tao,SUN De-en,LIANG Fei-ke,HUANG Jia-mu.Effects of Ion Source Cycle Bombardment on Structure and Electrical Properties of TiN Films Prepared by Magnetron Sputtering[J].China Surface Engineering,2017,30(1):77~82
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离子源循环轰击对磁控溅射TiN薄膜结构和电学性能的影响
邵涛, 孙德恩, 梁斐珂, 黄佳木
重庆大学 材料科学与工程学院, 重庆 400044
摘要:
为研究离子源循环轰击对薄膜结构和电学性能的影响，通过离子源轰击辅助直流磁控溅射在200℃下沉积不同循环周期TiN薄膜，采用场发射扫描电镜、原子力显微镜、X射线衍射仪表征薄膜表面形貌及组织结构。采用纳米压痕仪检测涂层的硬度和弹性模量。采用双电测四探针电阻仪测试室温下薄膜的电学性能。结果表明：离子源轰击在薄膜中形成了分层结构，膜层更加致密光滑，平均粗糙度由5.2 nm下降为2.7 nm。随着离子源循环轰击周期增加薄膜结晶性增强，并且当离子源循环轰击周期为3次时出现了TiN（200）峰，薄膜硬度和弹性模量提高。当经过2次离子源循环轰击时薄膜电阻值最低为8.1 μΩ·cm。
关键词:  TiN薄膜  离子源循环轰击  分层结构  电阻率
DOI：10.11933/j.issn.1007-9289.20160911002
分类号:
基金项目:中央高校基本科研业务费专项资金（CDJZR14135502）；重庆市基础与前沿研究计划项目（cstc2015jcyjA70005）
Effects of Ion Source Cycle Bombardment on Structure and Electrical Properties of TiN Films Prepared by Magnetron Sputtering
SHAO Tao, SUN De-en, LIANG Fei-ke, HUANG Jia-mu
School of Materials Science and Engineering, Chongqing University, Chongqing 400044
Abstract:
In order to study the effects of ion source cycle bombardment on the structure and electrical properties of titanium nitride (TiN) films, TiN films were deposited by ion source assisted magnetron sputtering at 200℃. The microstructure and phase composition of the films were investigated by field emission scanning electron microscopy (FESEM), atomic force microscope (AFM) and X-ray diffraction(XRD). The resistivity of the films was measured by a four-point probe at room temperature, and the hardness and elastic modulus were tested by nanoindentation. The results show that the films have a layered structure with higher density after the ion bombardment. The surface smoothness is also improved with the average roughness decreasing from 5.2 nm to 2.7 nm.The crystallinity of thin films is enhanced with the increase of the cycle of ion bombardment, and the TiN (200) diffraction peak appears at the three cycles ion bombardment. The hardness and elastic modulus of TiN films also increase with increasing period of ion bombardment. The resistivity of TiN films reaches the lowst value, 8.1 μΩ·cm, after two cycles ion bombardment.
Key words:  TiN films  ion source cycle bombardment  layered structure  resistivity
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