引用本文:王泽松,李慧,付德君.Cn团簇注入制备石墨烯的研究进展[J].中国表面工程,2016,29(5):1~15
WANG Ze-song,LI Hui,FU De-jun.Research Progress in Graphene Synthesis by Cn Cluster Ion Implantation[J].China Surface Engineering,2016,29(5):1~15
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Cn团簇注入制备石墨烯的研究进展
王泽松, 李慧, 付德君
武汉大学 物理科学与技术学院, 武汉 430072
摘要:
石墨烯是碳原子构成的单层二维晶体,在高频电子学和光电子器件领域具有广泛应用前景,厚度可控的大面积石墨烯的制备是实现规模化应用的前提。文中在介绍现有石墨烯制备技术优缺点的基础上,重点介绍了近几年离子注入过渡金属镍制备石墨烯的研究成果。研究表明:在低能碳团簇Cn注入制备石墨烯的过程中,离子能量、注入剂量、团簇尺寸、基体材料特性和退火条件是影响石墨烯物理性质的重要因素。团簇离子注入在基体表层引起的辐照损伤具有非线性效应,精确控制剂量的Cn团簇注入到基体中主要起到提供可控掺杂碳源的作用,高质量石墨烯的合成需要进行多晶基体预热处理以减少晶界密度,同时需采取精细的后续热处理工艺,控制碳原子在基体表面横向扩散和偏析,以满足石墨烯形核生长的关键条件。
关键词:  Cn团簇  石墨烯  拉曼光谱  热处理  扩散  偏析
DOI:10.11933/j.issn.1007-9289.2016.05.001
分类号:
基金项目:国家自然科学基金(11375135,11405117);中国博士后科学基金(2015M582261)
Research Progress in Graphene Synthesis by Cn Cluster Ion Implantation
WANG Ze-song, LI Hui, FU De-jun
School of Physics and Technology, Wuhan University, Wuhan 430072
Abstract:
Graphene is a two-dimensional crystal of carbon and has attracted great attention because preparation of large-area and uniform single-crystalline graphene is the basis for scaled application in microelectronics and optoelectronics. In this paper, different methods of growing graphene were reviewed and compared, and latest investigations on graphene synthesis on transition metal matrix such as Ni by ion implantation was reviewed. The investigations show that the physical properties of graphene prepared by low-energy Cn cluster ion implantation is significantly influenced by the incident energy, dose, cluster size, substrate type, and thermal processing. The radiation damage in the surface layer of the substrate produced by low-energy cluster ion implantation is characterized by the nonlinear cascade effect, and Cn cluster ion implantation with accurate dose mainly acts as a controllable carbon source provider. The preparation of high-quality graphene requires pre-annealing of polycrystalline matrix to reduce the density of grain boundaries, and critical annealing parameters with fine tuning for cluster ion-implanted samples to manipulation of lateral diffusion and segregation of carbon atoms on the surface of the substrate, to cope with the key point of graphene nucleation.
Key words:  Cn cluster  graphene  Raman spectroscopy  thermal treatment  diffusion  segregation
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