| 引用本文: | 李炎， 刘玉岭， 牛新环， 王傲尘， 李洪波.粗糙度和尖峰高度对粗糙铜晶圆表面化学反应动力学参数的影响[J].中国表面工程,2014,27(4):58~63 |
| LI Yan, LIU Yuling, NIU Xinhuan, WANG Aochen, LI Hongbo.Effects of Roughness and Peak Heights on the Chemical Reaction Kinetics Parameters of Rough Copper Wafer Surface[J].China Surface Engineering,2014,27(4):58~63 |
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| 摘要: |
| 根据液固化学反应特性和欧几里得有效面积公式，建立了适用于粗糙晶圆表面的化学反应动力学方程，得到了不同晶圆表面的化学反应速率常数和化学机械平坦化(CMP)前后晶圆质量差。根据晶圆表面不同位置的lg(RMS height)lgx拟合直线斜率和截距的平均值，得到了每个晶圆表面的分形维数与尺度系数，进一步得到了铜膜化学反应分级数。通过分析晶圆表面分形维数对化学反应动力学参数的影响，可以得出： 当表面分形维数为2.917时，铜膜的化学反应分级数为1，此时铜膜的络合反应过程中的所有瞬时反应数量达到最小值。最后的验证试验表明： 晶圆表面分形维数越大，CMP后尖峰消除量越大，即铜膜表面化学反应速率越快；晶圆表面分形维数越小，CMP后粗糙度下降越明显，即铜膜表面化学反应均匀性越好。 |
| 关键词: 质量作用定律 动力学方程 分形维数 均方根高度 粗糙度 |
| DOI：10.3969/j.issn.1007-9289.2014.04.009 |
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| Effects of Roughness and Peak Heights on the Chemical Reaction Kinetics Parameters of Rough Copper Wafer Surface |
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LI Yan, LIU Yuling, NIU Xinhuan, WANG Aochen, LI Hongbo1,2
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1. Institute of Microelectronic Technique and Materials, Hebei University of Technology, Tianjin 300130;2. College of Information Engineering, Hebei United University, Tangshan 063000, Hebei
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| Abstract: |
| According to the liquidsolid chemical reaction characteristics and Euclid effective area formula, chemical reaction kinetics equation of the rough wafer surface was established. The chemical reaction rate constant and wafer quality difference of different wafer surfaces before or after chemical mechanical planarization(CMP) were obtained. Through the average values of the lg(RMS height)lgx fitting line slopes and intercepts of each position on the wafer surface, the fractal dimension and scale coefficient of each wafer surfaces were acquired, and the chemical reaction index of the copper film was further obtained. The effect of fractal dimension on the chemical reaction kinetics parameters shows that when the wafer surface fractal dimension is 2.917, the chemical reaction index of the copper film is 1, and then the number of instantaneous reactions of the copper complexation reaction reaches the minimum value. The final verification experiments show that the larger the wafer surface fractal dimension is, the bigger the peak removal after CMP is, i.e., the chemical reaction rate of the copper film surface is faster; the smaller the wafer surface fractal dimension is, the more obvious the roughness decline after CMP is, i.e., the uniformity of copper surface chemical reaction is better. |
| Key words: law of mass action kinetics equation fractal dimension RMS height roughness |
