| 摘要: |
| 利用光发射谱(OES)技术，对反应磁控溅射过程的氧化铝薄膜的迟滞效应进行了研究。对等离子体中的铝(396 nm)谱线和氧化铝(484 nm)谱线随氧气流量的变化进行了实时测量，获得了其迟滞曲线。在迟滞曲线的不同位置分别进行了氧化铝薄膜的沉积试验。采用X射线衍射仪（XRD）、能谱仪（EDS）和紫外可见吸收光谱仪（UVVIS）对薄膜的晶体结构、成分和透光性进行了分析。结果表明：由于磁控靶表面的氧化铝沉积影响了铝靶材的溅射，导致Al(396 nm)谱线的强度对氧化铝薄膜的晶体结构、原子比以及样品的透光性有明显的影响。同时，由迟滞曲线可知在氧气流量为1.5~2.0 mL/min的过渡区内存在着一个最优沉积带。在这个沉积带获得的样品，其成分具有最佳的化学原子量配比，为0.689。这说明沉积出了高质量的氧化铝薄膜。 |
| 关键词: 物理气相沉积 迟滞曲线 晶体结构 透光性 |
| DOI： |
| 分类号: |
| 基金项目:沈阳市科技攻关项目(F12028200) |
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| Hysteretic Process of Aluminium Oxide Films Deposited by Reactive Sputtering Method |
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XU Hua-bing, XU Xiang-kun1,2
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1. Department of Dynamic Engineering, Bohai Shipbuilding Vocational College, Huludao 125000, Liaoning;2. School of Application Technology, Shenyang Ligong University, Fushun 113122, Liaoning
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| Abstract: |
| The hysteretic behaviour of aluminium oxide films in reactive sputtering was investigated by plasma optical emission spectroscopy technology. The evolutions of aluminium(396 nm) and aluminium oxide(484 nm) emission lines as functions of oxygen flow rates were measured. The crystal structure, atomic ratio and light transmission of aluminium oxide films were analyzed by Xray diffraction (XRD), energy dispersive spectrometer (EDS) and ultravioletvisible spectroscopy (UVVIS). The results show that because the aluminium oxide deposited on the magnetron target impacts the alumina sputtering, the Al(396 nm) line intensity affects the crystal structure, atomic ratio and light transmission of aluminium oxide films. Meanwhile, the hysteresis curves show that an optimum deposition zone exists in the transition region where the oxygen flow rates is 1.5~2.0 mL/min. The sample obtains in this deposition zone and its composition has the best chemical atomic weight ratio of 0.689. This indicates that the deposited aluminium oxide films have excellent qualities. |
| Key words: physical vapor deposition hysteretic curve crystal structure transmittance |
