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| 摘要: |
| 化学气相沉积(CVD)金刚石的主要晶体缺陷为孪晶、层错和位错。杂质主要有非晶碳、石墨和氢等。文中对上述晶体缺陷及杂质的研究进行了回顾：这些缺陷和杂质可以存在于晶内或者晶界；缺陷密度、杂质含量与化学气相沉积的沉积条件有很大关系；一般缺陷密度和杂质含量随甲烷浓度的增加而增加；杂质的存在也直接影响金刚石晶体缺陷的形成；并对CVD金刚石的五次孪晶的研究作了总结。这对以后CVD金刚石的晶体学研究具有较大的指导意义。 |
| 关键词: 金刚石 晶体缺陷 杂质 |
| DOI： |
| 分类号:O483 O77 |
| 基金项目:国家教委博士点基金资助项目(No.1999056121);广东省自然科学基金资助项目(No.990548) |
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| Crystal Defects and Impurities of CVD Diamond Films |
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HUANG Yuan-sheng 1 LOU Cheng-ping 2 QIU Wan-qi 2
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| Abstract: |
| Crystal defects of CVD diamond films are mostly twins, stacking-faults and dislocations. Impurities are mostly morphous carbon, graphite and hydrogen. This paper reviews the research on the crystal defects and impurities. These crystal defects and impurities exist in crystal grains or on grain boundaries. The density of defects and the content of impurities are related with CVD deposition condition. In general, with the increase of CH4 concentration, they increase as well. Impurities either influence the formation of crystal defects. Five-fold twin in CVD diamond is wholly reviewed in the paper at the same time. It will help the research on the crystallology of CVD diamond films. |
| Key words: Diamond,crystal defects,impurities |
