| 引用本文: | 甘孔银,汤宝寅,王浪平,王小峰,王松雁,武洪臣.用于全方位离子注入的10kV固体脉冲调制器研制[J].中国表面工程,2003,(4):34~38 |
| .Research on The 10 kV Solid-state Pulse Modulator for Plasma Immersion ion Implantation[J].China Surface Engineering,2003,(4):34~38 |
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| 摘要: |
| 采用IGBT串联技术研制成功了用于全方位离子注入的10kV固体脉冲调制器。试验表明：该固体脉冲调制器在纯阻性负载时最高输出电压为14kV，最高输出脉冲电流为20A，输出脉冲宽度可在2μs和112μs之间以1μs步长变化、脉冲重复频率范围为1Hz-4kHz，短时间可以工作到8．6kHz。但在等离子体负载时，由于输入电容的影响，下降时间比较长。 |
| 关键词: 全方位离子注入 固体脉冲调制器 IGBT串联 |
| DOI： |
| 分类号:TG174.444 |
| 基金项目: |
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| Research on The 10 kV Solid-state Pulse Modulator for Plasma Immersion ion Implantation |
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Tang Baoyin1,Gan Kongyin1,Wang Langpin1,Wang Xiaofeng1,Wang Shongyan1,Wu Hongcheng2
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| Abstract: |
| A 10 kV solid-state modulator for plasma immersion ion implantation has been developed in our laboratory. The prototype makes use of switches made of IGBTs arranged in series. In the case of the pseduo-load, the output voltage can be adjusted from one to ten kV and the pulse width can be varied from 2 to 110 microseconds, the pulsing frequency in the initial design can be changed from 1Hz to 4 kHz. Our experimental results show that the solid-state switch can operate in the frequency up to 8.6 kHz and in the voltage up to 14 kV. The typical rise time is less than 500 ns and the typical fall time is about 1.25 ms. |
| Key words: Plasma immersion ion implantation,Solid-state pulse modulator,IGBT, |
