引用本文:张剑， 陈文革.直流磁控溅射制备二氧化硅薄膜及其性能[J].中国表面工程,2013,26(1):34~39
ZHANG Jian, CHEN Wen-ge.Properties of the Silicon Dioxide Films Fabricated by DC Reactive Magnetron Sputtering[J].China Surface Engineering,2013,26(1):34~39
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直流磁控溅射制备二氧化硅薄膜及其性能
张剑， 陈文革
西安理工大学 材料科学与工程学院， 西安 710048
摘要:
采用直流反应磁控溅射法在单晶硅上制备二氧化硅薄膜。利用Ｘ射线衍射仪（XRD）、原子力显微镜（AFM）以及傅里叶交换红外光谱仪（FTIR）等研究制备过程中氧含量和溅射功率对薄膜的微结构、表面形貌以及红外吸收等性能的影响。结果表明，室温下溅射出的SiO2薄膜是非晶结构的；随着氧含量的增加，折射率、沉积速率、粗糙度都逐渐减小；沉积速率和粗糙度随着溅射功率的增加而增加；当氧气含量为40%时，薄膜的折射率接近二氧化硅的折射率(1.46)。退火后薄膜的压电常数随氧含量的增加先增大再减小，介电常数随着频率的增大而减小。
关键词:  磁控溅射  非晶  表面形貌
DOI：
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基金项目:西安市科技攻关项目（CXY11241）
Properties of the Silicon Dioxide Films Fabricated by DC Reactive Magnetron Sputtering
ZHANG Jian, CHEN Wen-ge
School of Materials Science and Engineering, Xian University of Technology, Xi'an 710048
Abstract:
Silicon dioxide thin films were prepared by direct current (DC) reactive magnetron sputtering on silicon substrate. The effects of oxygen concentration and sputtering power on the structure and properties of the SiO2 films were studied by Xray diffraction(XRD), atomic force microscopy (AFM) and Fourier transform infrared spectrometer(FTIR).The results show that the SiO2 films sputtered at room temperature are amorphous structure. The refractive index, deposition rate and roughness decrease with increasing oxygen concentration, and the deposition rate and the roughness increase with increasing power sputtering power. When the oxygen content is 40%, the refractive index of the films is close to that of the silila(1.46). After annealing, the films piezoelectric constant first increases then decreases with increasing oxygen concentration, and the dielectric constant decreases with increasing frequency.
Key words:  magnetron sputtering  amorphous  surface morphology
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