| 摘要: |
| 采用热丝化学气相沉积（HWCVD）和射频等离子体化学气相沉积（RFPECVD）相结合的技术，在普通载玻片和聚酰亚胺衬底上沉积制备微晶硅薄膜。系统考查了热丝到衬底的距离对沉积薄膜结构和性能的影响规律，用拉曼光谱仪、X射线衍射仪(XRD)、紫外可见光纤光谱仪对薄膜的晶化率、微观结构和光学性能进行研究。结果表明：薄膜沉积速率最高可达到0.73 nm/s，晶化率和禁带宽度分别可以在0%～78%和0.86～1.28 eV变化，射频等离子体的引入有助于多晶硅薄膜的（220）择优生长，HWCVD的引入有助于薄膜晶化。 |
| 关键词: 微晶硅薄膜 射频等离子体增强化学气相沉积 热丝气相沉积 |
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| Anti-wear and Anti-corrosion Treatment of Cooling Tubes for the Power Plant Boilers |
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SUN Xiaofei1, ZHANG Guifeng1, HOU Xiaoduo1 , FENG Yudong2
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(1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, Liaoning; 2. State Key Laboratory of Surface Engineering Lanzhou Institute of Physics, Lanzhou 730000)
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| Abstract: |
| A combination technique of HWCVD and RFPECVD was used to prepare hydrogenated microcrystalline silicon (μcSi:H) films on glass substrate and polyimide substrate. The disciplines of the effects of the distance from the glass substrate to the hot wire on the films’ structure and properties were investigated. The crystallinity, microstructure, electrical and optical properties of the μcSi:H films were investigated by raman spectroscopy, Xray diffraction analysis (XRD), and UVvisible spectrometer. The results indicate that the crystallinity and energy gap of the μcSi:H films can be controlled in a range of 0%78% and 0.861.28 eV. The deposition rate is up to 0.73 nm/s. The microcrystalline silicon thin film with (220) preferred orientation can be obtained by introducing RF plasma. The films are liable to crystallize by introducing HWCVD. |
| Key words: microcrystalline silicon(μcSi:H) films RFPECVD HWCVD |
